SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES hExcellent hFE Linearity. hCom...
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES hExcellent hFE Linearity. hComplementary to KTC9013.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature
VCBO VCEO VEBO
IC IE PC Tj
Storage Temperature Range
Tstg
RATING -40 -30 -5 -500 500 625 150
-55q150
UNIT V V V mA mA mW
L M
C
KTC9012
EPITAXIAL PLANAR
PNP TRANSISTOR
B
C
A
K
E
G
D
H
F
F
1 23
J
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER 2. BASE 3. COLLECTOR
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
Collector Cut-off Current
ICBO
VCB=-35V, IE=0
-
Emitter Cut-off Current
IEBO
VEB=-5V, IC=0
-
DC Current Gain
hFE (Note) VCE=-1V, IC=-50mA
64
Collector-Emitter Saturation Voltage
VCE(sat)
IC=-100mA, IB=-10mA
-
Base-Emitter Voltage
VBE
IC=-100mA, VCE=-1V
Transition Frequency
fT
VCB=-6V, IC=-20mA, f=100MHz
150
Collector Output Capacitance
Cob
VCB=-6V, IE=0, f=1MHz
-
Note : hFE Classification D:64q91, E:78q112, F:96q135, G:118q166, H:144q202, I:176q246
TYP. -
-0.1 -0.8
7.0
MAX. -0.1 -0.1 246 -0.25 -1.0
-
UNIT ǺA ǺA
V V MHz pF
2011. 4. 4
Revision No : 3
1/1
KTC9012
COLLECTOR CURRENT IC (mA)
-600 -500 -400 -300 -...
