SN74BCT2827C

BiCMOS Design Substantially Reduces ICCZ Output Ports Have Equivalent 25-Ω Resistors; No External Resistors Are Required Specifically Designed to Drive MOS DRAMs 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers Flow-Through Architecture Optimizes PCB Layout Power-Up High-Impedance State ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015 Package Options Include Plastic Small-Outline (DW) Packages, Ceramic Chip Carriers (FK) and Flatpacks (W), and Standard Plastic and Ceramic 300-mil DIPs (JT, NT) description These 10-bit buffers and bus drivers are specifically designed to drive the capacitive input characteristics of MOS DRAMs. They provide high-performance bus interface for wide data paths or buses carrying parity. The 3-state control gate is a 2-input AND gate with active-low inputs so if either output-enable (OE1 or OE2) input is high, all ten outputs are in the high-impedance state. The outputs are also in the high-impedance state during power-up and power-down conditions. The outputs remain in the high-impedance state while the device is powered down. The SN54BCT2827C is characterized for operation over the full military temperature range of −55°C to 125°C. The SN74BCT2827C is characterized for operation from 0°C to 70°C. SN54BCT2827C, SN74BCT2827C 10ĆBIT BUS/MOS MEMORY DRIVERS WITH 3ĆSTATE OUTPUTS SCBS007E − APRIL 1987 − REVISED NOVEMBER 1993 SN54BCT2827C . . . JT OR W PACKAGE SN74BCT2827C . . . DW OR NT PACKAGE (TOP VIEW) OE...