D BiCMOS Design Significantly Reduces ICCZ D ESD Protection Exceeds 2000 V Per
MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
D Open-Collector Outputs Drive Bus Lines or
Buffer Memory Address Registers
D Package Options Include Plastic
Small-Outline Packages (DW) and Standard Plastic 300-mil DIPs (N)
description
This octal bu...