DatasheetsPDF.com

SMA6J10A Dataheets PDF



Part Number SMA6J10A
Manufacturers Vishay
Logo Vishay
Description Surface-Mount TRANSZORB TVS
Datasheet SMA6J10A DatasheetSMA6J10A Datasheet (PDF)

www.vishay.com SMA6J5.0A thru SMA6J28A Vishay General Semiconductor Surface-Mount TRANSZORB® Transient Voltage Suppressors SMA (DO-214AC) LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models PRIMARY CHARACTERISTICS VBR 6.4 V to 34.4 V VWM 5.0 V to 28 V PPPM (10 x 1000 μs) 600 W PPPM (8 x 20 μs) 4000 W PD at TA = 50 °C 4W IFSM 50 A TJ max. Polarity 150 °C Unidirectional Package SMA (DO-214AC) FEATURES • Low profile package • Ideal for automated placement • Available in unidirectiona.

  SMA6J10A   SMA6J10A



Document
www.vishay.com SMA6J5.0A thru SMA6J28A Vishay General Semiconductor Surface-Mount TRANSZORB® Transient Voltage Suppressors SMA (DO-214AC) LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models PRIMARY CHARACTERISTICS VBR 6.4 V to 34.4 V VWM 5.0 V to 28 V PPPM (10 x 1000 μs) 600 W PPPM (8 x 20 μs) 4000 W PD at TA = 50 °C 4W IFSM 50 A TJ max. Polarity 150 °C Unidirectional Package SMA (DO-214AC) FEATURES • Low profile package • Ideal for automated placement • Available in unidirectional polarity only • Excellent clamping capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication. MECHANICAL DATA Case: SMA (DO-214AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant and commercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Peak pulse power dissipation with a 10/1000 μs waveform (1)(2) Peak pulse power dissipation with a 8/20 μs waveform PPPM Peak pulse current with a 10/1000 μs waveform (1)(2) IPPM Peak pulse current with a 8/20 μs waveform Power dissipation on infinite heatsink, TA = 50 °C PD Peak forward surge current 8.3 ms single half sine-wave IFSM Operating junction and storage temperature range TJ, TSTG Notes (1) Non-repetitive current pulse, per fig. 1 and derated above TA = 25 °C per fig. 2 (2) Mounted on PCB with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal VALUE 600 4000 See next table 4.0 50 -55 to +150 UNIT W A W A °C Revision: 17-Sep-2021 1 Document Number: 89115 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com INDEX OF SYMBOLS SYMBOL PARAMETER VWM VBR VC ID IPP αT Stand-off voltage Breakdown voltage Clamping voltage Leakage current at VWM Peak pulse current Voltage temperature coefficient VF Forward voltage drop RD Dynamic resistance SMA6J5.0A thru SMA6J28A Vishay General Semiconductor I IF VWM VBR VC ID VF V IT IPP ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE TYPE DEVICE MARKING CODE BREAKDOWN VOLTAGE VBR AT IT (1) MIN. MAX. MAXIMUM REVERSE LEAKAGE ID AT VWM 25 °C 85 °C STAND-OFF VOLTAGE VWM VC AT IPP RD (2) 10/1000 μs MAX. V mA μA V V A Ω SMA6J5.0A 6AE 6.4 7.07 10 150 375 5.0 9.1 65.9 0.031 VC AT IPP RD (2) 8/20 μs MAX. V A Ω 13.4 298 0.021 αT (3) MAX. 10-4/°C 5.7 SMA6J6.0A 6AG 6.7 7.41 10 600 1500 6.0 9.5 63.2 0.033 13.7 290 0.022 5.9 SMA6J6.5A 6AK 7.2 7.96 10 100 250 6.5 10.2 58.8 0.038 14.5 276 0.024 6.1 SMA6J7.5A 6AP 8.33 9.21 1 50 125 7.5 11.8 50.8 0.051 17.0 235 0.033 6.5 SMA6J8.0A 6AR 8.89 9.83 1 20 50 8.0 12.5 48.0 0.056 18.2 220 0.038 7.0 SMA6J8.5A 6AT 9.4 10.4 1 20 50 8.5 13.3 45.1 0.064 18.7 205 0.040 7.3 SMA6J10A 6AX 11.1 12.3 1 1 5 10 15.7 38.2 0.089 19.6 184 0.040 7.8 SMA6J11A 6AZ 12.2 13.5 1 1 5 11 17.2 34.8 0.107 21.5 172 0.047 8.1 SMA6J12A 6BE 13.3 14.7 1 0.2 1 12 18.8 31.9 0.128 23.5 157 0.056 8.3 SMA6J13A 6BG 14.4 15.9 1 0.2 1 13 20.4 29.4 0.153 23.9 147 0.054 8.4 SMA6J15A 6BM 16.7 18.5 1 0.2 1 15 23.6 25.4 0.201 27.7 123 0.075 8.8 SMA6J16A 6BP 17.8 19.7 1 0.2 1 16 25.2 23.8 0.229 29.5 119 0.083 8.8 SMA6J17A 6BR 18.9 20.9 1 0.2 1 17 26.7 22.5 0.259 31.4 111 0.094 9.0 SMA6J18A 6BT 20.0 22.1 1 0.2 1 18 28.3 21.2 0.292 33.2 102 0.109 9.2 SMA6J20A 6BV 22.2 24.5 1 0.2 1 20 31.4 19.1 0.361 36.8 93 0.132 9.4 SMA6J22A 6BX 24.4 26.9 1 0.2 1 22 34.5 17.4 0.437 40.4 89 0.152 9.5 SMA6J24A 6BZ 26.7 29.5 1 0.2 1 24 37.8 15.9 0.523 44.3 80 0.185 9.6 SMA6J26A 6CE 28.9 31.9 1 0.2 1 26 40.9 14.7 0.614 47.9 75 0.213 9.7 SMA6J28A 6CG 31.1 34.4 1 0.2 1 28 44.0 13.6 0.704 51.6 68 0.253 9.8 Notes (1) Pulse test: tp ≤ 50 ms (2) To calculate maximum clamping voltage at other surge currents, use the following formula: VCLmax. = RD x IPP + VBRmax. (3) To calculate VBR vs. junction temperature, use the following formula: VBR at TJ = VBR at 25 °C x (1 + αT x (TJ - 25) (4) VF = 3.5 V at IF = 25 A, pulse test: 300 µs pulse width Revision: 17-Sep-2021 2 Document Number: 89115 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS .


SMA6J8.5A SMA6J10A SMA6J11A


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)