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N-Channel MOSFET. 75339S Datasheet

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N-Channel MOSFET. 75339S Datasheet






75339S MOSFET. Datasheet pdf. Equivalent




75339S MOSFET. Datasheet pdf. Equivalent





Part

75339S

Description

N-Channel MOSFET



Feature


HUF75339G3, HUF75339P3, HUF75339S3S Dat a Sheet June 1999 File Number 4363.5 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MO SFETs are manufactured using the innova tive UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon are a, resulting in outstanding performance . This device is cap.
Manufacture

Intersil

Datasheet
Download 75339S Datasheet


Intersil 75339S

75339S; able of withstanding high energy in the avalanche mode and the diode exhibits v ery low reverse recovery time and store d charge. It was designed for use in ap plications where power efficiency is i mportant, such as switching regulators, switching converters, motor drivers, r elay drivers, lowvoltage bus switches, and power management in portable and ba ttery-operated produ.


Intersil 75339S

cts. Formerly developmental type TA75339 . Ordering Information PART NUMBER P ACKAGE BRAND HUF75339G3 TO-247 7533 9G HUF75339P3 TO-220AB 75339P HUF75 339S3S TO-263AB 75339S NOTE: When or dering, use the entire part number. Add the suffix T to obtain the TO-263AB va riant in tape and reel, e.g., HUF75339S 3ST. Packaging JEDEC STYLE TO-247 SOU RCE DRAIN GATE Fe.


Intersil 75339S

atures • 75A, 55V • Simulation Model s - Temperature Compensated PSPICE® an d SABER© Models - SPICE and SABER Ther mal Impedance Models Available on the W EB at: www.Intersil.com/families/models .htm • Peak Current vs Pulse Width Cu rve • UIS Rating Curve • Related Li terature - TB334, “Guidelines for Sol dering Surface Mount Components to PC B oards” Symbol D G S JEDEC TO-22.

Part

75339S

Description

N-Channel MOSFET



Feature


HUF75339G3, HUF75339P3, HUF75339S3S Dat a Sheet June 1999 File Number 4363.5 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MO SFETs are manufactured using the innova tive UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon are a, resulting in outstanding performance . This device is cap.
Manufacture

Intersil

Datasheet
Download 75339S Datasheet




 75339S
HUF75339G3, HUF75339P3, HUF75339S3S
Data Sheet
June 1999 File Number 4363.5
75A, 55V, 0.012 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET™ process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75339.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75339G3
TO-247
75339G
HUF75339P3
TO-220AB
75339P
HUF75339S3S
TO-263AB
75339S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75339S3ST.
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
Features
• 75A, 55V
• Simulation Models
- Temperature Compensated PSPICE® and SABER©
Models
- SPICE and SABER Thermal Impedance Models
Available on the WEB at:
www.Intersil.com/families/models.htm
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
DRAIN
(TAB)
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
121
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
SABER© is a Copyright of Analogy, Inc. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999




 75339S
HUF75339G3, HUF75339P3, HUF75339S3S
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
55
V
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
55
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
±20
V
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
75
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Figure 4
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Figures 6, 14, 15
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200
1.35
W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 175
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
BVDSS
IDSS
IGSS
ID = 250µA, VGS = 0V (Figure 11)
VDS = 50V, VGS = 0V
VDS = 45V, VGS = 0V, TC = 150oC
VGS = ±20V
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
VGS(TH)
rDS(ON)
VGS = VDS, ID = 250µA (Figure 10)
ID = 75A, VGS = 10V (Figure 9)
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
RθJC
RθJA
(Figure 3)
TO-247
TO-220, TO-263
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
tON
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
Turn-Off Time
tOFF
GATE CHARGE SPECIFICATIONS
VDD = 30V, ID 75A,
RL = 0.4, VGS = 10V,
RGS = 5.1
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Reverse Transfer Capacitance
Qg(TOT)
Qg(10)
Qg(TH)
Qgs
Qgd
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 30V,
ID 75A,
RL = 0.4
Ig(REF) = 1.0mA
(Figure 13)
MIN TYP MAX UNITS
55
-
-
V
-
-
1
µA
-
-
250
µA
-
-
±100
nA
2
-
4
V
-
0.010 0.012
-
-
0.74 oC/W
-
-
30
oC/W
-
-
62
oC/W
-
-
110
ns
-
15
-
ns
-
60
-
ns
-
20
-
ns
-
25
-
ns
-
-
70
ns
-
110
130
nC
-
60
75
nC
-
3.7
4.5
nC
-
9
-
nC
-
23
-
nC
122




 75339S
HUF75339G3, HUF75339P3, HUF75339S3S
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
SYMBOL
TEST CONDITIONS
VSD
trr
QRR
ISD = 75A
ISD = 75A, dISD/dt = 100A/µs
ISD = 75A, dISD/dt = 100A/µs
Typical Performance Curves
MIN TYP MAX UNITS
-
2000
-
pF
-
700
-
pF
-
160
-
pF
MIN
TYP
MAX UNITS
-
-
1.25
V
-
-
85
ns
-
-
160
nC
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
80
60
40
20
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
1 0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
10-5
SINGLE PULSE
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
100
101
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
123



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