75333G

HUF75333G3, HUF75333P3, HUF75333S3S, HUF75333S3 Data Sheet December 2001 66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching convertors, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. . Ordering Information PART NUMBER PACKAGE BRAND HUF75333G3 TO-247 75333G HUF75333P3 TO-220AB 75333P HUF75333S3S TO-263AB 75333S HUF75333S3 TO-262AA 75333S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUF75333S3ST. Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE Features 66A, 55V Simulation Models - Temperature Compensated PSPICE® and SABER™ Models - SPICE and SABER Thermal Impedance Models Available on the WEB at: www.fairchildsemi.com Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Formerly developmental type TA75333 Symbol D G S JEDEC TO-220AB DR...