Data Sheet
October 2013
HUF75321P3
N-Channel UltraFET Power MOSFET 55 V, 35 A, 34 mΩ
These N-Channel power MOSFETs ar...
Data Sheet
October 2013
HUF75321P3
N-Channel UltraFET Power MOSFET 55 V, 35 A, 34 mΩ
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching
regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and batteryoperated products.
Formerly developmental type TA75321.
Ordering Information
PART NUMBER HUF75321P3
PACKAGE TO-220AB
BRAND 75321P
Features
35A, 55V
Simulation Models - Temperature Compensated PSPICE® and SABER™ Models - Thermal Impedance SPICE and SABER Models Available on the WEB at: www.fairchildsemi.com
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol
D G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE DRAIN GATE
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 ...