75329D

Data Sheet HUF75329D3S October 2013 N-Channel UltraFET Power MOSFET 55 V, 20 A, 26 mΩ These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and batteryoperated products. Formerly developmental type TA75329. Ordering Information PART NUMBER HUF75329D3ST PACKAGE TO-252AA BRAND 75329D Features 20A, 55V Simulation Models - Temperature Compensated PSPICE® and SABER™ Models - SPICE and SABER Thermal Impedance Models Available on the WEB at: www.onsemi.com Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Packaging JEDEC TO-252AA G S GATE SOURCE DRAIN (FLANGE) ©2001 Semiconductor Components Industries, LLC. October-2017, Rev. 3 Publication Order Number: HUF75329D3S/D HUF75329D3S Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate V...