75329G

HUF75329G3, HUF75329P3, HUF75329S3S Data Sheet December 2001 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75329. Ordering Information PART NUMBER PACKAGE BRAND HUF75329G3 TO-247 75329G HUF75329P3 TO-220AB 75329P HUF75329S3S TO-263AB 75329S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUF75329S3ST. Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE Features 49A, 55V Ultra Low On-Resistance, rDS(ON) = 0.024Ω Temperature Compensating PSPICE® and SABER™ Models - Available on the web at: www.fairchildsemi.com Thermal Impedance PSPICE and SABER Models Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S JEDEC TO-220AB DRAIN (FLANGE) ...