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N-Channel MOSFET. 75343G Datasheet

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N-Channel MOSFET. 75343G Datasheet






75343G MOSFET. Datasheet pdf. Equivalent






75343G MOSFET. Datasheet pdf. Equivalent


75343G

Part

75343G

Description

N-Channel MOSFET



Feature


HUF75343G3, HUF75343P3, HUF75343S3, HUF7 5343S3S Data Sheet March 2003 75A, 5 5V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative U ltraFET® process. This advanced proces s technology achieves the lowest possib le onresistance per silicon area, resul ting in outstanding performance. This d evice is capable of.
Manufacture

Fairchild Semiconductor

Datasheet
Download 75343G Datasheet


Fairchild Semiconductor 75343G

75343G; withstanding high energy in the avalanc he mode and the diode exhibits very low reverse recovery time and stored charg e. It was designed for use in applicati ons where power efficiency is important , such as switching regulators, switchi ng converters, motor drivers, relay dri vers, low-voltage bus switches, and pow er management in portable and battery o perated products. .


Fairchild Semiconductor 75343G

Formerly developmental type TA75343. Or dering Information PART NUMBER PACKAG E BRAND HUF75343G3 TO-247 75343G H UF75343P3 TO-220AB 75343P HUF75343S3 TO-262AA 75343S HUF75343S3S TO-263 AB 75343S NOTE: When ordering, use th e entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUF75343S3ST. Packagin g JEDEC STYLE TO-.

Part

75343G

Description

N-Channel MOSFET



Feature


HUF75343G3, HUF75343P3, HUF75343S3, HUF7 5343S3S Data Sheet March 2003 75A, 5 5V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative U ltraFET® process. This advanced proces s technology achieves the lowest possib le onresistance per silicon area, resul ting in outstanding performance. This d evice is capable of.
Manufacture

Fairchild Semiconductor

Datasheet
Download 75343G Datasheet




 75343G
HUF75343G3, HUF75343P3, HUF75343S3,
HUF75343S3S
Data Sheet
March 2003
75A, 55V, 0.009 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
achieves the lowest possible on-
resistance per silicon area, resulting in outstanding
performance. This device is capable of withstanding high
energy in the avalanche mode and the diode exhibits very
low reverse recovery time and stored charge. It was
designed for use in applications where power efficiency is
important, such as switching regulators, switching
converters, motor drivers, relay drivers, low-voltage bus
switches, and power management in portable and battery
operated products.
Formerly developmental type TA75343.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75343G3
TO-247
75343G
HUF75343P3
TO-220AB
75343P
HUF75343S3
TO-262AA
75343S
HUF75343S3S
TO-263AB
75343S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75343S3ST.
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
Features
• 75A, 55V
• Simulation Models
- Temperature Compensating PSPICE® and SABER™
Models
- Thermal Impedance PSPICE™ and SABER Models
Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
DRAIN
(TAB)
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
JEDEC TO-262AA
SOURCE
DRAIN
GATE
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2003 Fairchild Semiconductor Corporation
HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S Rev. B1




 75343G
HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . .
Derate Above 25oC
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PD
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . .TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . Tpkg
55
55
±20
75
Figure 4
Figure 6
270
1.81
-55 to 175
300
260
UNITS
V
V
V
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
BVDSS
IDSS
IGSS
ID = 250µA, VGS = 0V (Figure 11)
VDS = 50V, VGS = 0V
VDS = 45V, VGS = 0V, TC = 150oC
VGS = ±20V
VGS(TH)
rDS(ON)
VGS = VDS, ID = 250µA (Figure 10)
ID = 75A, VGS = 10V (Figure 9)
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
RθJC
RθJA
(Figure 3)
TO-247
TO-220, TO-263
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
tON
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
Turn-Off Time
tOFF
GATE CHARGE SPECIFICATIONS
VDD = 30V, ID 75A,
RL = 0.4, VGS = 10V,
RGS = 2.5
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Qg(TOT)
Qg(10)
Qg(TH)
Qgs
Qgd
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 30V,
ID 75A,
RL = 0.4
Ig(REF) = 1.0mA
(Figure 13)
MIN TYP MAX UNITS
55
-
-
V
-
-
1
µA
-
-
250
µA
-
-
±100
nA
2
-
4
V
-
0.007 0.009
-
-
0.55 oC/W
-
-
30
oC/W
-
-
62
oC/W
-
-
125
ns
-
9
-
ns
-
75
-
ns
-
32
-
ns
-
18
-
ns
-
-
75
ns
-
170
205
nC
-
92
110
nC
-
6.0
7.2
nC
-
13
-
nC
-
42
-
nC
©2003 Fairchild Semiconductor Corporation
HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S Rev. B1



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