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N-Channel MOSFET. 75344P Datasheet

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N-Channel MOSFET. 75344P Datasheet






75344P MOSFET. Datasheet pdf. Equivalent




75344P MOSFET. Datasheet pdf. Equivalent





Part

75344P

Description

N-Channel MOSFET



Feature


Data Sheet HUF75344G3, HUF75344P3 Octob er 2013 N-Channel UltraFET Power MOSFE T 55 V, 75 A, 8 mΩ These N-Channel po wer MOSFETs are manufactured using the innovative UltraFET process. This advan ced process technology achieves the low est possible onresistance per silicon a rea, resulting in outstanding performan ce. This device is capable of withstand ing high energy in t.
Manufacture

Fairchild Semiconductor

Datasheet
Download 75344P Datasheet


Fairchild Semiconductor 75344P

75344P; he avalanche mode and the diode exhibits very low reverse recovery time and sto red charge. It was designed for use in applications where power efficiency is important, such as switching regulators , switching converters, motor drivers, relay drivers, low-voltage bus switches , and power management in portable and batteryoperated products. Formerly deve lopmental type TA7.


Fairchild Semiconductor 75344P

5344. Ordering Information PART NUMBER HUF75344G3 HUF75344P3 PACKAGE TO-247 TO-220AB BRAND 75344G 75344P Features • 75A, 55V • Simulation Models - T emperature Compensated PSPICE® and SAB ER™ Models - Thermal Impedance PSPICE and SABER Models Available on the web at: www.fairchildsemi.com • Peak Curr ent vs Pulse Width Curve • UIS Rating Curve • Related Literature -.


Fairchild Semiconductor 75344P

TB334, “Guidelines for Soldering Surf ace Mount Components to PC Boards” Sy mbol D G S Packaging JEDEC STYLE TO-2 47 SOURCE DRAIN GATE JEDEC TO-220AB D RAIN (FLANGE) SOURCE DRAIN GATE DRAIN (TAB) Product reliability information can be found at http://www.fairchildse mi.com/products/discrete/reliability/in dex.html For severe environments, see o ur Automotive HUFA ser.

Part

75344P

Description

N-Channel MOSFET



Feature


Data Sheet HUF75344G3, HUF75344P3 Octob er 2013 N-Channel UltraFET Power MOSFE T 55 V, 75 A, 8 mΩ These N-Channel po wer MOSFETs are manufactured using the innovative UltraFET process. This advan ced process technology achieves the low est possible onresistance per silicon a rea, resulting in outstanding performan ce. This device is capable of withstand ing high energy in t.
Manufacture

Fairchild Semiconductor

Datasheet
Download 75344P Datasheet




 75344P
Data Sheet
HUF75344G3, HUF75344P3
October 2013
N-Channel UltraFET Power MOSFET
55 V, 75 A, 8 mΩ
These N-Channel power MOSFETs are manufactured
using the innovative UltraFET process. This advanced
process technology achieves the lowest possible on-
resistance per silicon area, resulting in outstanding
performance. This device is capable of withstanding high
energy in the avalanche mode and the diode exhibits very
low reverse recovery time and stored charge. It was
designed for use in applications where power efficiency is
important, such as switching regulators, switching
converters, motor drivers, relay drivers, low-voltage bus
switches, and power management in portable and battery-
operated products.
Formerly developmental type TA75344.
Ordering Information
PART NUMBER
HUF75344G3
HUF75344P3
PACKAGE
TO-247
TO-220AB
BRAND
75344G
75344P
Features
• 75A, 55V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Models
- Thermal Impedance PSPICE and SABER Models
Available on the web at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
DRAIN
(TAB)
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2004 Fairchild Semiconductor Corporation
HUF75344G3, HUF75344P3 Rev. C0




 75344P
HUF75344G3, HUF75344P3
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . .
Derate Above 25oC
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PD
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . .TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . Tpkg
55
55
±20
75
Figure 4
Figure 6
285
1.90
-55 to 175
300
260
UNITS
V
V
V
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
SYMBOL
BVDSS
IDSS
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
IGSS
VGS(TH)
rDS(ON)
RθJC
RθJA
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
GATE CHARGE SPECIFICATIONS
tON
td(ON)
tr
td(OFF)
tf
tOFF
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Reverse Transfer Capacitance
CAPACITANCE SPECIFICATIONS
Qg(TOT)
Qg(10)
Qg(TH)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
TEST CONDITIONS
ID = 250µA, VGS = 0V (Figure 11)
VDS = 50V, VGS = 0V
VDS = 45V, VGS = 0V, TC = 150oC
VGS = ±20V
VGS = VDS, ID = 250µA (Figure 10)
ID = 75A, VGS = 10V (Figure 9)
(Figure 3)
TO-247
TO-220
VDD = 30V, ID 75A,
RL = 0.4, VGS = 10V,
RGS = 3.0
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 30V,
ID 75A,
RL = 0.4
Ig(REF) = 1.0mA
(Figure 13)
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)
MIN TYP MAX UNITS
55
-
-
V
-
-
1
µA
-
-
250
µA
-
-
±100
nA
2
-
4
V
-
6.5
8.0
m
-
-
0.52 oC/W
-
-
30
oC/W
-
-
62
oC/W
-
-
187
ns
-
13
-
ns
-
125
-
ns
-
46
-
ns
-
57
-
ns
-
-
147
ns
-
175
210
nC
-
90
108
nC
-
5.9
7.0
nC
-
14
-
nC
-
39
-
nC
-
3200
-
pF
-
1170
-
pF
-
310
-
pF
©2004 Fairchild Semiconductor Corporation
HUF75344G3, HUF75344P3 Rev. C0




 75344P
HUF75344G3, HUF75344P3
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
SYMBOL
VSD
trr
QRR
TEST CONDITIONS
ISD = 75A
ISD = 75A, dISD/dt = 100A/µs
ISD = 75A, dISD/dt = 100A/µs
MIN
TYP
MAX UNITS
-
-
1.25
V
-
-
105
ns
-
-
210
nC
Typical Performance Curves
1.2
80
1.0
60
0.8
0.6
40
0.4
0.2
0
0
25
50
75
100
125 150
175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
20
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
1 0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.1
0.01
10-5
SINGLE PULSE
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
100
101
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
©2004 Fairchild Semiconductor Corporation
HUF75344G3, HUF75344P3 Rev. C0



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