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Power MOSFET. HUF75345G3 Datasheet

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Power MOSFET. HUF75345G3 Datasheet






HUF75345G3 MOSFET. Datasheet pdf. Equivalent






HUF75345G3 MOSFET. Datasheet pdf. Equivalent


HUF75345G3

Part

HUF75345G3

Description

N-Channel Power MOSFET



Feature


MOSFET – Power, N-Channel, UltraFET 55 V, 75 A, 7 mW HUF75345G3, HUF75345P3, HUF75345S3S Description These N−Chan nel power MOSFETs are manufactured usin g the innovative UltraFET process. This advanced process technology achieves t he lowest possible on−resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy.
Manufacture

ON Semiconductor

Datasheet
Download HUF75345G3 Datasheet


ON Semiconductor HUF75345G3

HUF75345G3; in the avalanche mode and the diode exh ibits very low reverse recovery time an d stored charge. It was designed for us e in applications where power efficienc y is important, such as switching regul ators, switching converters, motor driv ers, relay drivers, low−voltage bus s witches, and power management in portab le and battery−operated products. Fea tures • 75 A, 55 V • S.


ON Semiconductor HUF75345G3

imulation Models − Temperature Compens ated PSPICEt and SABER® Models − The rmal Impedance SPICE and SABER Models Peak Current vs Pulse Width Curve UIS Rating Curve • These Devices ar e Pb−Free www.onsemi.com VDSS 55 V RDS(ON) MAX 7 mW D ID MAX 75 A G S D RAIN (TAB) TO−247−3 CASE 340CK G D S GDS DRAIN (FLANGE) TO−220−3 CAS E 340AT DRAIN (FLANGE) G S D2PAK−3 CA.

Part

HUF75345G3

Description

N-Channel Power MOSFET



Feature


MOSFET – Power, N-Channel, UltraFET 55 V, 75 A, 7 mW HUF75345G3, HUF75345P3, HUF75345S3S Description These N−Chan nel power MOSFETs are manufactured usin g the innovative UltraFET process. This advanced process technology achieves t he lowest possible on−resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy.
Manufacture

ON Semiconductor

Datasheet
Download HUF75345G3 Datasheet




 HUF75345G3
MOSFET – Power, N-Channel,
UltraFET
55 V, 75 A, 7 mW
HUF75345G3, HUF75345P3,
HUF75345S3S
Description
These NChannel power MOSFETs are manufactured using
the innovative UltraFET process. This advanced process technology
achieves the lowest possible onresistance per silicon area, resulting
in outstanding performance. This device is capable of withstanding
high energy in the avalanche mode and the diode exhibits very low
reverse recovery time and stored charge. It was designed for use
in applications where power efficiency is important, such as switching
regulators, switching converters, motor drivers, relay drivers,
lowvoltage bus switches, and power management in portable
and batteryoperated products.
Features
75 A, 55 V
Simulation Models
Temperature Compensated PSPICEt and SABER® Models
Thermal Impedance SPICE and SABER Models
Peak Current vs Pulse Width Curve
UIS Rating Curve
These Devices are PbFree
www.onsemi.com
VDSS
55 V
RDS(ON) MAX
7 mW
D
ID MAX
75 A
G
S
DRAIN (TAB)
TO2473
CASE 340CK
G
D
S
GDS
DRAIN (FLANGE)
TO2203
CASE 340AT
DRAIN (FLANGE)
G
S
D2PAK3
CASE 418AJ
MARKING DIAGRAM
$Y&Z&3&K
75345X
© Semiconductor Components Industries, LLC, 2009
March, 2020 Rev. 3
$Y
&Z
&3
&K
75345X
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
= Specific Device Code
X = G/P/S
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
1
Publication Order Number:
HUF75345S3S/D




 HUF75345G3
HUF75345G3, HUF75345P3, HUF75345S3S
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Package
HUF75345G3
TO2473
HUF75345P3
TO2203
HUF75345S3ST
D2PAK3
Brand
75345G
75345P
75345S
MOSFET MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
VDGR
VGS
ID
IDM
EAS
PD
Drain to Source Voltage (Note 1)
Drain to Gate Voltage (RGS = 20 kW) (Note 1)
Gate to Source Voltage
Drain Current
Continuous (Figure 2)
Drain Current
Pulsed
Pulsed Avalanche Rating
Power Dissipation
(TC = 25°C)
Derate Above 25°C
55
55
±20
75
Figure 4
Figure 6
325
2.17
V
V
V
A
W
W/°C
TJ, TSTG Operating and Storage Temperature
55 to +175
°C
TL
Maximum Temperature for Soldering Leads at 0.063 in (1.6 mm) from Case for 10 s
300
°C
Tpkg
Maximum Temperature for Soldering Leads Package Body for 10 s
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. TJ = 25°C to 150°C
www.onsemi.com
2



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