HUF75345G3

MOSFET – Power, N-Channel, UltraFET 55 V, 75 A, 7 mW HUF75345G3, HUF75345P3, HUF75345S3S Description These N−Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on−resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low−voltage bus switches, and power management in portable and battery−operated products. Features 75 A, 55 V Simulation Models − Temperature Compensated PSPICEt and SABER® Models − Thermal Impedance SPICE and SABER Models Peak Current vs Pulse Width Curve UIS Rating Curve These Devices are Pb−Free www.onsemi.com VDSS 55 V RDS(ON) MAX 7 mW D ID MAX 75 A G S DRAIN (TAB) TO−247−3 CASE 340CK G D S GDS DRAIN (FLANGE) TO−220−3 CASE 340AT DRAIN (FLANGE) G S D2PAK−3 CASE 418AJ MARKING DIAGRAM $Y&Z&3&K 75345X © Semiconductor Components Industries, LLC, 2009 March, 2020 − Rev. 3 $Y &Z &3 &K 75345X = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code X = G/P/S ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. 1 Publication Order Number: HUF75345S3S/D ...