DatasheetsPDF.com

Power MOSFET. 75345S Datasheet

DatasheetsPDF.com

Power MOSFET. 75345S Datasheet






75345S MOSFET. Datasheet pdf. Equivalent




75345S MOSFET. Datasheet pdf. Equivalent





Part

75345S

Description

N-Channel Power MOSFET



Feature


MOSFET – Power, N-Channel, UltraFET 55 V, 75 A, 7 mW HUF75345G3, HUF75345P3, HUF75345S3S Description These N−Chan nel power MOSFETs are manufactured usin g the innovative UltraFET process. This advanced process technology achieves t he lowest possible on−resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy.
Manufacture

ON Semiconductor

Datasheet
Download 75345S Datasheet


ON Semiconductor 75345S

75345S; in the avalanche mode and the diode exh ibits very low reverse recovery time an d stored charge. It was designed for us e in applications where power efficienc y is important, such as switching regul ators, switching converters, motor driv ers, relay drivers, low−voltage bus s witches, and power management in portab le and battery−operated products. Fea tures • 75 A, 55 V • S.


ON Semiconductor 75345S

imulation Models − Temperature Compens ated PSPICEt and SABER® Models − The rmal Impedance SPICE and SABER Models Peak Current vs Pulse Width Curve UIS Rating Curve • These Devices ar e Pb−Free www.onsemi.com VDSS 55 V RDS(ON) MAX 7 mW D ID MAX 75 A G S D RAIN (TAB) TO−247−3 CASE 340CK G D S GDS DRAIN (FLANGE) TO−220−3 CAS E 340AT DRAIN (FLANGE) G S D2PAK−3 CA.


ON Semiconductor 75345S

SE 418AJ MARKING DIAGRAM $Y&Z&3&K 7534 5X © Semiconductor Components Industr ies, LLC, 2009 March, 2020 − Rev. 3 $Y &Z &3 &K 75345X = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device C ode X = G/P/S ORDERING INFORMATION See detailed ordering and shipping informa tion on page 2 of this data sheet. 1 Publication Order Num.

Part

75345S

Description

N-Channel Power MOSFET



Feature


MOSFET – Power, N-Channel, UltraFET 55 V, 75 A, 7 mW HUF75345G3, HUF75345P3, HUF75345S3S Description These N−Chan nel power MOSFETs are manufactured usin g the innovative UltraFET process. This advanced process technology achieves t he lowest possible on−resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy.
Manufacture

ON Semiconductor

Datasheet
Download 75345S Datasheet




 75345S
MOSFET – Power, N-Channel,
UltraFET
55 V, 75 A, 7 mW
HUF75345G3, HUF75345P3,
HUF75345S3S
Description
These NChannel power MOSFETs are manufactured using
the innovative UltraFET process. This advanced process technology
achieves the lowest possible onresistance per silicon area, resulting
in outstanding performance. This device is capable of withstanding
high energy in the avalanche mode and the diode exhibits very low
reverse recovery time and stored charge. It was designed for use
in applications where power efficiency is important, such as switching
regulators, switching converters, motor drivers, relay drivers,
lowvoltage bus switches, and power management in portable
and batteryoperated products.
Features
75 A, 55 V
Simulation Models
Temperature Compensated PSPICEt and SABER® Models
Thermal Impedance SPICE and SABER Models
Peak Current vs Pulse Width Curve
UIS Rating Curve
These Devices are PbFree
www.onsemi.com
VDSS
55 V
RDS(ON) MAX
7 mW
D
ID MAX
75 A
G
S
DRAIN (TAB)
TO2473
CASE 340CK
G
D
S
GDS
DRAIN (FLANGE)
TO2203
CASE 340AT
DRAIN (FLANGE)
G
S
D2PAK3
CASE 418AJ
MARKING DIAGRAM
$Y&Z&3&K
75345X
© Semiconductor Components Industries, LLC, 2009
March, 2020 Rev. 3
$Y
&Z
&3
&K
75345X
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
= Specific Device Code
X = G/P/S
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
1
Publication Order Number:
HUF75345S3S/D




 75345S
HUF75345G3, HUF75345P3, HUF75345S3S
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Package
HUF75345G3
TO2473
HUF75345P3
TO2203
HUF75345S3ST
D2PAK3
Brand
75345G
75345P
75345S
MOSFET MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
VDGR
VGS
ID
IDM
EAS
PD
Drain to Source Voltage (Note 1)
Drain to Gate Voltage (RGS = 20 kW) (Note 1)
Gate to Source Voltage
Drain Current
Continuous (Figure 2)
Drain Current
Pulsed
Pulsed Avalanche Rating
Power Dissipation
(TC = 25°C)
Derate Above 25°C
55
55
±20
75
Figure 4
Figure 6
325
2.17
V
V
V
A
W
W/°C
TJ, TSTG Operating and Storage Temperature
55 to +175
°C
TL
Maximum Temperature for Soldering Leads at 0.063 in (1.6 mm) from Case for 10 s
300
°C
Tpkg
Maximum Temperature for Soldering Leads Package Body for 10 s
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. TJ = 25°C to 150°C
www.onsemi.com
2




 75345S
HUF75345G3, HUF75345P3, HUF75345S3S
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
OFF STATE CHARACTERISTICS
BVDSS
Drain to Source Breakdown Voltage ID = 250 mA, VGS = 0 V (Figure 11)
55
IDSS
Zero Gate Voltage Drain Current
VDS = 50 V, VGS = 0 V
VDS = 45 V, VGS = 0 V, TC = 150_C
IGSS
Gate to Source Leakage Current
VGS = ±20 V
ON STATE CHARACTERISTICS
V
1
mA
250
±100
nA
VGS(TH)
Gate to Source Threshold Voltage
RDS(ON)
Drain to Source On Resistance
THERMAL CHARACTERISTICS
VGS = VDS, ID = 250 mA (Figure 10)
ID = 75 A, VGS = 10 V (Figure 9)
2
4.0
V
0.006 0.007
W
RqJC
RqJA
Thermal Resistance Junction to Case (Figure 3)
Thermal Resistance Junction to Ambient TO247
Thermal Resistance Junction to Ambient TO220, D2PAK
0.46 _C/W
30
_C/W
62
_C/W
SWITCHING CHARACTERISTICS (VGS = 10 V)
tON
Turn-On Time
td(ON)
Turn-On Delay Time
tr
Rise Time
td(OFF)
Turn-Off Delay Time
tf
Fall Time
tOFF
Turn-Off Time
GATE CHARGE CHARACTERISTICS
VDD = 30 V, ID = 75 A,
RL = 0.4 W, VGS = 10 V, RGS = 2.5 W
195
ns
14
ns
118
ns
42
ns
26
ns
98
ns
Qg(tot)
Total Gate Charge
Qg(10)
Gate Charge at 10 V
Qg(th)
Threshold Gate Charge
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
CAPACITANCE CHARACTERISTICS
VGS = 0 V to 20 V,
VDD = 30 V, ID = 75 A, RL = 0.4 W,
Ig(REF) = 1.0 mA (Figure 13)
VGS = 0 V to 10 V,
VDD = 30 V, ID = 75 A, RL = 0.4 W,
Ig(REF) = 1.0 mA (Figure 13)
VGS = 0 V to 2 V,
VDD = 30 V, ID = 75 A, RL = 0.4 W,
Ig(REF) = 1.0 mA (Figure 13)
VDD = 30 V, ID = 75 A, RL = 0.4 W,
Ig(REF) = 1.0 mA (Figure 13)
220
275
nC
125
165
nC
6.8
10
nC
14
nC
58
nC
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
SOURCE TO DRAIN DIODE CHARACTERISTICS
VDS = 25 V, VGS = 0 V, f = 1 Mhz
(Figure 12)
4000
pF
1450
pF
450
pF
VSD
Source to Drain Diode Voltage
ISD = 75 A
1.25
V
trr
Reverse Recovery Time
ISD = 75 A, dlSD/dt = 100 A/ms
55
ns
QRR
Reverse Recovered Charge
ISD = 75 A, dlSD/dt = 100 A/ms
80
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
3



Recommended third-party 75345S Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)