Document
D Wide Range of Supply Voltages Over
Specified Temperature Range: – 40°C to 85°C . . . 2 V to 8 V
D Fully Characterized at 3 V and 5 V D Single-Supply Operation D Common-Mode Input-Voltage Range
Extends Below the Negative Rail and Up to VDD – 1 V at 25°C
D Output Voltage Range Includes Negative
Rail
D High Input Impedance . . . 1012 Ω Typical D ESD-Protection Circuitry D Designed-In Latch-Up Immunity
description
The TLV234x operational amplifiers are in a family of devices that has been specifically designed for use in low-voltage single-supply applications. Unlike other products in this family designed primarily to meet aggressive power consumption specifications, the TLV234x was developed to offer ac performance approaching that of a BiFET operational amplifier while operating from a single-supply rail. At 3 V, the TLV234x has a typical slew rate of 2.1 V/µs and 790-kHz unity-gain bandwidth.
Each amplifier is fully functional down to a minimum supply voltage of 2 V and is fully characterized, tested, and specified at both 3-V and 5-V power supplies over a temperature range of – 40°C to 85°C. The common-mode input voltage range includes the negative rail and extends to within 1 V of the positive rail.
TLV2342, TLV2342Y, TLV2344, TLV2344Y LinCMOS™ LOW-VOLTAGE HIGH-SPEED
OPERATIONAL AMPLIFIERS
SLOS194 – FEBRUARY 1997
TLV2342 D OR P PACKAGE
(TOP VIEW)
1OUT 1 1IN – 2 1IN + 3 VDD– / GND 4
8 VDD 7 2OUT 6 2IN – 5 2IN +
TLV2342 PW PACKAGE
(TOP VIEW)
1OUT
1
8
VDD +
1IN–
2
7
2OUT
1IN +
3
6
2IN –
VDD – / GND
4
5
2IN +
TLV2344 D OR N PACKAGE
(TOP VIEW)
1OUT 1 1IN – 2 1IN + 3 VDD + 4 2IN + 5 2N – 6 2OUT 7
14 4OUT 13 4IN – 12 4IN + 11 VDD – / GND 10 3IN + 9 3IN – 8 3OUT
1OUT 1IN – 1IN + VDD+ 2IN + 2IN – 2OUT
TLV2344 PW PACKAGE
(TOP VIEW)
1
14
7
8
4OUT 4IN – 4IN + VDD – / GND 3IN + 3IN – 3OUT
AVAILABLE OPTIONS
PACKAGED DEVICES
TA
VIOmax AT 25°C
SMALL OUTLINE† PLASTIC DIP PLASTIC DIP
TSSOP‡
(D)
(N)
(P)
(PW)
– 40°C to 85°C
9 mV 10 mV
TLV2342ID TLV2344ID
— TLV2344IN
TLV2342IP —
TLV2342IPWLE TLV2344IPWLE
† The D package is available taped and reeled. Add R suffix to the device type (e.g., TLV2342IDR). ‡ The PW package is only available left-end taped and reeled (e.g., TLV2342IPWLE). § Chip forms are tested at 25°C only.
CHIP FORM§ (Y)
TLV2342Y TLV2344Y
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
LinCMOS is a trademark of Texas Instruments Incorporated.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
Copyright © 1997, Texas Instruments Incorporated
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1
TLV2342, TLV2342Y, TLV2344, TLV2344Y LinCMOS™ LOW-VOLTAGE HIGH-SPEED OPERATIONAL AMPLIFIERS
SLOS194 – FEBRUARY 1997
description (continued)
Low-voltage and low-power operation has been made possible by using the Texas Instruments silicon-gate LinCMOS technology. The LinCMOS process also features extremely high input impedance and ultra-low input bias currents. These parameters combined with good ac performance make the TLV234x effectual in applications such as high-frequency filters and wide-bandwidth sensors.
To facilitate the design of small portable equipment, the TLV234x is made available in a wide range of package options, including the small-outline and thin-shrink small-outline packages (TSSOP). The TSSOP package has significantly reduced dimensions compared to a standard surface-mount package. Its maximum height of only 1.1 mm makes it particularly attractive when space is critical.
The device inputs and outputs are designed to withstand –100-mA currents without sustaining latch-up. The TLV234x incorporates internal ESD-protection circuits that prevents functional failures at voltages up to 2000 V as tested under MIL-PRF-38535, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in the degradation of the device parametric performance.
TLV2342Y chip information
This chip, when properly assembled, displays characteristics similar to the TLV2342. Thermal compression or ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
(5)
(4)
(6) 59
(3)
VDD
(8)
(3)
1IN +
+
(1)
(2)
(2) 1IN –
–
1OUT
(5)
2IN +
+
(7)
(6)
2IN –
–
(4)
VDD – /GND
2OUT
(7)
(1)
CHIP THICKNESS: 15 MILS TYPICAL
(8)
BONDING PADS: 4 × 4 MILS MINIMUM
72
TJmax = 150°C
TOLERANCES ARE ± 10%.
ALL DIMENSIONS ARE IN MILS.
2
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TLV2342, TLV2342Y.