Silicon N-Channel Power MOSFET
○R
CS150N03 A8
General Description: CS150N03 A8, the silicon N-channel Enhanced
VDMOSFE...
Silicon N-Channel Power MOSFET
○R
CS150N03 A8
General Description: CS150N03 A8, the silicon N-channel Enhanced
VDMOSFETs, is obtained by advanced trench Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The
transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard.
Features:
l Fast Switching l Low ON Resistance(Rdson≤3.5mΩ) l Low Gate Charge (Typical Data:75nC) l Low Reverse transfer capacitances(Typical:800pF) l 100% Single Pulse avalanche energy Test
Applications:
UPS,Inverter,Lighting.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 dv/dt a3
PD
TJ,Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation Derating Factor above 25°C Operating Junction and Storage Temperature Range Maximum Temperature for Soldering
VDSS
30
ID
150
PD (TC=25℃)
100
RDS(ON)Typ
2.8
Rating
30 150 120 600 ±20 1300 4.0 100 0.67 –55 to 175 300
V A W mΩ
Units V A A A V mJ
V/ns W
W/℃ ℃ ℃
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 20 15V0 1
CS150N03 A8
○R
Electrical Characteristics(Tc= 25℃ unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS ΔVD...