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KSD5072 Datasheet, Equivalent, Power Transistor.Silicon NPN Power Transistor Silicon NPN Power Transistor |
| Part | KSD5072 |
|---|---|
| Description | Silicon NPN Power Transistor |
| Feature | 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07 081 U. S. A. , Line. . TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8 960 Silicon NPN Power Transistor KSD5 072 DESCRIPTION • High Breakdown Vol tage- : VCBO= 1500V (Min) • High Swit ching Speed • High Reliability • Bu ilt-in Damper Diode B . ,. 2 •jo— « k ¥ TI^LJ PIN 1. BASE 2. COLLECTOR 3 . EMITTER TO-3PML package APPLICATIONS • Designed for color TV horizontal o utput applicaitions ABSOLUTE MAXIMUM R ATINGS(Ta=25'C) SYMBOL PARAMETER VAL UE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Volta ge 800 V' VEBO Emitter-Bas . |
| Manufacture | NJS |
| Datasheet |
| Part | KSD5072 |
|---|---|
| Description | Silicon NPN Power Transistor |
| Feature | 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07 081 U. S. A. , Line. . TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8 960 Silicon NPN Power Transistor KSD5 072 DESCRIPTION • High Breakdown Vol tage- : VCBO= 1500V (Min) • High Swit ching Speed • High Reliability • Bu ilt-in Damper Diode B . ,. 2 •jo— « k ¥ TI^LJ PIN 1. BASE 2. COLLECTOR 3 . EMITTER TO-3PML package APPLICATIONS • Designed for color TV horizontal o utput applicaitions ABSOLUTE MAXIMUM R ATINGS(Ta=25'C) SYMBOL PARAMETER VAL UE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Volta ge 800 V' VEBO Emitter-Bas . |
| Manufacture | NJS |
| Datasheet |
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