13003

ST13003, ST13003-K High voltage fast-switching NPN power transistor 3 2 1 SOT-32 Figure 1. Internal schematic diagram C(2) B(3) Datasheet - production data Features High voltage capability Low spread of dynamic parameters Very high switching speed Applications Electronic ballast for fluorescent lighting (CFL) SMPS for battery charger Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. SC06960r E(1) Part number ST13003 ST13003-K Marking 13003 13003 Table 1. Device summary Package SOT-32 SOT-32 June 2013 This is information on a product in full production. DocID13533 Rev 5 Packaging Tube Bag 1/10 www.st.com Electrical ratings 1 Electrical ratings ST13003, ST13003-K Symbol Table 2. Absolute maximum ratings Parameter Value Unit VCES VCEO VEBO IC ICM IB IBM PTOT TSTG TJ Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0, IB = 0.75 A, tP < 10 μs) Collector current Collector peak current (tP < 5 ms) Base current Base peak current (tP < 5 ms) Total dissipation at TC = 25 °C Storage temperature Operating junction temperature 700 V 400 V V(BR)EBO V 1.5 A 3 A 0.75 A 1.5 A 40 W -55 to 150 °C -40 to 150 °C Symbol Table 3. Thermal data Parameter RthJC Thermal resistance...