MJE2955

MJE2955T ® MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary PNP type is MJE2955T. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VCEO Collector-Emitter Voltage (IB = 0) VCBO Collector-Base Voltage (IE = 0) VEBO Emitter-Base Voltage (IC = 0) IC Collector Current IB Base Current Ptot Total Power Dissipation at Tcase ≤ 25 oC Tstg Storage Temperature Tj Max. Operating Junction Temperature For PNP types voltage and current values are negative. September 2003 NPN PNP Value MJE3055T MJE2955T 60 70 5 10 6 75 -55 to 150 150 Unit V V V A A W oC oC 1/4 MJE2955T / MJE3055T THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.66 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICEO Collector Cut-off Current (IB = 0) VCE = 30 V ICEX Collector Cut-off Current (VBE = 1.5V) VCE = 70 V Tcase = 150oC ICBO Collector Cut-off Current (IE = 0) VCBO = 70 V Tcase = 150oC IEBO Emitter Cut-off Current (IC = 0) VCEO(sus)∗ Collector-Emitter Sustaining Voltage (IB = 0) VCE(sat)∗ Collector-Emitter Sustaining Voltage VEBO = 5 V IC = 200 mA IC = 4 A IC = 10 A IB = 0.4 A IB = 3.3 A VBE(on)∗ Base-Emitt...