Document
MJE2955T (PNP), MJE3055T (NPN)
Complementary Silicon Plastic Power Transistors
These devices are designed for use in general−purpose amplifier and switching applications.
Features
• High Current Gain − Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Base Current Total Device Dissipation
@ TC = 25°C Derate above 25°C
VCEO
60
VCB
70
VEB
5.0
IC
10
IB
6.0
PD
(Note 1)
75
0.6
Vdc Vdc Vdc Adc Adc
W W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Safe Area Curves are indicated by Figure 1. Both limits are applicable and
must be observed.
THERMAL CHARACTERISTICS Characteristics
Thermal Resistance, Junction−to−Case
Symbol RqJC
Max 1.67
Unit °C/W
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10 AMPERE COMPLEMENTARY SILICON
POWER TRANSISTORS 60 VOLTS − 75 WATTS
PNP COLLECTOR 2, 4
NPN COLLECTOR 2, 4
1 BASE
EMITTER 3
4
1 BASE
EMITTER 3
TO−220 CASE 221A−09
STYLE 1
1 2 3
MARKING DIAGRAM
MJExx55TG AY WW
MJExx55T = Device Code
xx = 29 or 30
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW
= Work Week
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
Device MJE2955TG
MJE3055TG
Package
TO−220 (Pb−Free)
TO−220 (Pb−Free)
Shipping 50 Units / Rail
50 Units / Rail
© Semiconductor Components Industries, LLC, 2015
1
January, 2015 − Rev. 12
Publication Order Number: MJE2955T/D
MJE2955T (PNP), MJE3055T (NPN)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2) (IC = 200 mAdc, IB = 0)
VCEO(sus) 60
Collector Cutoff Current (VCE = 30 Vdc, IB = 0)
ICEO −
Collector Cutoff Current (VCE = 70 Vdc, VEB(off) = 1.5 Vdc) (VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150°C)
ICEX − −
Max
Unit
Vdc −
mAdc 700
mAdc 1.0 5.0
Collector Cutoff Current (VCB = 70 Vdc, IE = 0) (VCB = 70 Vdc, IE = 0, TC = 150°C)
ICBO − −
mAdc
1.0 10
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain (Note 2) (IC = 4.0 Adc, VCE = 4 0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc)
IEBO −
mAdc 5.0
hFE
−
20
100
5.0
−
Collector−Emitter Saturation Voltage (Note 2)
(IC = 4.0 Adc, IB = 0.4 Adc) (IC = 10 Adc, IB = 3.3 Adc)
VCE(sat) − −
Vdc
1.1 8.0
Base−Emitter On Voltage (Note 2) (IC = 4.0 Adc, VCE = 4.0 Vdc)
VBE(on) −
Vdc 1.8
DYNAMIC CHARACTERISTICS
Current−Gain−Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz)
fT
MHz
2.0
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 20%.
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IC, COLLECTOR CURRENT (AMP)
hFE, DC CURRENT GAIN
MJE2955T (PNP), MJE3055T (NPN)
10
7.0
100 ms
5.0
5.0 ms 1.0 ms
dc
3.0
2.0
1.0 0.7 0.5
0.3 0.2
0.1 5.0
TJ = 150°C SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED TC = 25°C (D = 0.1)
7.0
10
20
30
50 60
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Active−Region Safe Operating Area
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 1 is based on TJ(pk) = 150°C. TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
500
300
200
TJ = 150°C
100 25°C
50 - 55°C
30 20
VCE = 2.0 V
10
5.0 0.01 0.02
0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP) Figure 2. DC Current Gain
5.0 10
PD, POWER DISSIPATION (WATTS)
90
80
70
60
50
40
MJE3055T
MJE2955T
30
20
10
0
0
25
50
75 100 125 150 175
TC, CASE TEMPERATURE (°C)
Figure 3. Power Derating
MJE2955T 2.0
MJE3055T 1.4
TJ = 25°C 1.6
1.2 TJ = 25°C 1.0
V, VOLTAGE (VOLTS)
1.2
0.8 VBE(sat) @ IC/IB = 10
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 2.0 V
VBE @ VCE = 3.0 V
0.4
0.4
VCE(sat) @ IC/IB = 10
0
0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
.