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MJE3055TG Dataheets PDF



Part Number MJE3055TG
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Complementary Silicon Plastic Power Transistors
Datasheet MJE3055TG DatasheetMJE3055TG Datasheet (PDF)

MJE2955T (PNP), MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features • High Current Gain − Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C VCEO 60 VCB 70 VEB .

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MJE2955T (PNP), MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features • High Current Gain − Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C VCEO 60 VCB 70 VEB 5.0 IC 10 IB 6.0 PD (Note 1) 75 0.6 Vdc Vdc Vdc Adc Adc W W/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed. THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction−to−Case Symbol RqJC Max 1.67 Unit °C/W www.onsemi.com 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS − 75 WATTS PNP COLLECTOR 2, 4 NPN COLLECTOR 2, 4 1 BASE EMITTER 3 4 1 BASE EMITTER 3 TO−220 CASE 221A−09 STYLE 1 1 2 3 MARKING DIAGRAM MJExx55TG AY WW MJExx55T = Device Code xx = 29 or 30 G = Pb−Free Package A = Assembly Location Y = Year WW = Work Week *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ORDERING INFORMATION Device MJE2955TG MJE3055TG Package TO−220 (Pb−Free) TO−220 (Pb−Free) Shipping 50 Units / Rail 50 Units / Rail © Semiconductor Components Industries, LLC, 2015 1 January, 2015 − Rev. 12 Publication Order Number: MJE2955T/D MJE2955T (PNP), MJE3055T (NPN) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 2) (IC = 200 mAdc, IB = 0) VCEO(sus) 60 Collector Cutoff Current (VCE = 30 Vdc, IB = 0) ICEO − Collector Cutoff Current (VCE = 70 Vdc, VEB(off) = 1.5 Vdc) (VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150°C) ICEX − − Max Unit Vdc − mAdc 700 mAdc 1.0 5.0 Collector Cutoff Current (VCB = 70 Vdc, IE = 0) (VCB = 70 Vdc, IE = 0, TC = 150°C) ICBO − − mAdc 1.0 10 Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) ON CHARACTERISTICS DC Current Gain (Note 2) (IC = 4.0 Adc, VCE = 4 0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) IEBO − mAdc 5.0 hFE − 20 100 5.0 − Collector−Emitter Saturation Voltage (Note 2) (IC = 4.0 Adc, IB = 0.4 Adc) (IC = 10 Adc, IB = 3.3 Adc) VCE(sat) − − Vdc 1.1 8.0 Base−Emitter On Voltage (Note 2) (IC = 4.0 Adc, VCE = 4.0 Vdc) VBE(on) − Vdc 1.8 DYNAMIC CHARACTERISTICS Current−Gain−Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz) fT MHz 2.0 − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 20%. www.onsemi.com 2 IC, COLLECTOR CURRENT (AMP) hFE, DC CURRENT GAIN MJE2955T (PNP), MJE3055T (NPN) 10 7.0 100 ms 5.0 5.0 ms 1.0 ms dc 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 5.0 TJ = 150°C SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED TC = 25°C (D = 0.1) 7.0 10 20 30 50 60 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. Active−Region Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 1 is based on TJ(pk) = 150°C. TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 500 300 200 TJ = 150°C 100 25°C 50 - 55°C 30 20 VCE = 2.0 V 10 5.0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP) Figure 2. DC Current Gain 5.0 10 PD, POWER DISSIPATION (WATTS) 90 80 70 60 50 40 MJE3055T MJE2955T 30 20 10 0 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (°C) Figure 3. Power Derating MJE2955T 2.0 MJE3055T 1.4 TJ = 25°C 1.6 1.2 TJ = 25°C 1.0 V, VOLTAGE (VOLTS) 1.2 0.8 VBE(sat) @ IC/IB = 10 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 2.0 V VBE @ VCE = 3.0 V 0.4 0.4 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 .


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