2SK2925

2SK2925(L),2SK2925(S) Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance RDS = 0.060 Ω typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline REJ03G1039-0500 (Previous: ADE-208-454B) Rev.5.00 Sep 07, 2005 RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2)) 4 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S)) 4 D G 12 3 1 23 S 1. Gate 2. Drain 3. Source 4. Drain Rev.5.00 Sep 07, 2005 page 1 of 8 2SK2925(L),2SK2925(S) Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note3 EAR Note3 Pch Note2 Tch Tstg Ratings 60 ±20 10 40 10 10 8.5 20 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C °C Electrical Characteristics Item Symbol Min Drain to source breakdown voltage V(BR)DSS 60 Gate to source breakdown voltage V(BR)GSS ±20 Gate to source leak current IGSS — Zero gate voltage drain current IDSS — Gate to source cutoff voltage VGS(off) 1.5 Static drain to source on state resistance RDS(on) — RDS(on) — Forward transfer admittance |yfs| 5 Input capacitance Ciss — Output capacitance Coss — Reverse transfer capacitance Crss — Tur...