2SK2925(L),2SK2925(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance RDS = 0.060 Ω typ.
High speed switching 4 V gate drive device can be driven from 5 V source
Outline
REJ03G1039-0500 (Previous: ADE-208-454B)
Rev.5.00 Sep 07, 2005
RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2))
4
RENESAS Package code:...
