2SK2096
Silicon N Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings
Outline
REJ03G0997-0200 (Previous: ADE-208-1344)
Rev.2.00 Sep 07, 2005
RENESAS Package ...
