2SK2529
Silicon N Channel MOS FET
Application
High speed power switching
Features
Low on-resistance RDS(on) = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source
Outline
REJ03G1014-0800 (Previous: ADE-208-356F)
Rev.8.00 Sep 07, 2005
RENESAS Package code: PRSS0003AE-A (Package name: TO-220CFM)
D
G
1. Gate 2. Drain 3....
