K1338

2SK1338 Silicon N Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) 123 REJ03G0935-0200 (Previous: ADE-208-1275) Rev.2.00 Sep 07, 2005 D G 1. Gate 2. Drain (Flange) 3. Source S Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1338 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Electrical Characteristics Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Item Symbol Min Typ Drain to Source breakdown voltage V(BR)DSS 900 — Gate to Source breakdown voltage V(BR)GSS ±30 — Gate to Source leak current IGSS — — Zero Gate voltage Drain current IDSS — — Gate to Source cutoff voltage VGS(off) 2.0 — Static Drain to Source on state resistance RDS(on) — 5.0 Forward transfer admittance |yfs| 0.9 1.5 Input capacitance Ciss — 425 Output capacitance Coss — 175 Reverse transfer capacitance Crss — 85 Turn-on delay time td(on) — 10 Rise time tr — 35 Turn-off delay time td(off) — 60 Fall time tf — 50 Body to Drain diode forward voltage VDF — 0.9 Body to Drain diode reverse recovery time trr — 7...