2SK1338
Silicon N Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switc...
2SK1338
Silicon N Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching
regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB)
123
REJ03G0935-0200 (Previous: ADE-208-1275)
Rev.2.00 Sep 07, 2005
D
G
1. Gate
2. Drain
(Flange)
3. Source
S
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1338
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
Symbol VDSS VGSS ID
ID(pulse)*1 IDR
Pch*2 Tch Tstg
Item
Symbol Min
Typ
Drain to Source breakdown voltage V(BR)DSS 900
—
Gate to Source breakdown voltage V(BR)GSS ±30
—
Gate to Source leak current
IGSS
—
—
Zero Gate voltage Drain current
IDSS
—
—
Gate to Source cutoff voltage
VGS(off)
2.0
—
Static Drain to Source on state resistance
RDS(on)
—
5.0
Forward transfer admittance
|yfs|
0.9
1.5
Input capacitance
Ciss
—
425
Output capacitance
Coss
—
175
Reverse transfer capacitance
Crss
—
85
Turn-on delay time
td(on)
—
10
Rise time
tr
—
35
Turn-off delay time
td(off)
—
60
Fall time
tf
—
50
Body to Drain diode forward voltage VDF
—
0.9
Body to Drain diode reverse recovery time
trr
—
7...