isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Fas...
isc N-Channel MOSFET
Transistor
DESCRIPTION ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching
Regulators ·DC-DC Converter, ·Motor Control
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
200
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
7
A
ID(puls)
Pulsed Drain Current
28
A
Ptot
Total Dissipation@TC=25℃
50
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SK2590
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc N-Channel Mosfet
Transistor
2SK2590
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VSD
Diode Forward On-Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
tr
Rise Time
td(on)
Turn-on Delay Time
tf
Fall Time
td(off)
Turn-off Delay Time
CONDITIONS VGS= 0; ID= 10mA VDS= 10V; ID=1mA IS=7A ;VGS= 0 VGS= 10V; ID= 4A VGS= ±16V;VDS= 0 VDS= 160V; VGS= 0 VDS=10V; VGS=0V; fT=1MHz
VGS=10V; ID=4A; RL=7.5Ω
MIN TYPE MAX UNIT
200
V
1.5
3.5
V
1.1
V
0.33 0.45 Ω
±10 µA
250 µA
700
45
pF
260
45
20 ns
35
50
NOTICE: ISC res...