C945P

DATA SHEET NPN SILICON TRANSISTOR 2SC945 NPN SILICON TRANSISTOR DESCRIPTION The 2SC945 is designed for use in driver stage of AF amplifier and low speed switching. FEATURES High voltage LVCEO = 50 V MIN. Excellent hFE linearity hFE1 = (0.1 mA)/hFE2 (1.0 mA) = 0.92 TYP. PACKAGE DRAWING (Unit: mm) φ 5.2 MAX. 5.5 MAX. 12.7 MIN. ABSOLUTE MAXIMUM RATINGS Maximum Temperature Storage Temperature Junction Temperature Maximum Power Dissipation (TA = 25°C) −55 to +150°C +150°C Maximum Total Power Dissipation Maximum Voltages and Currents (TA = 25°C) 250 mW VCBO Collector to Base Voltage 60 V VCEO VEBO IC Collector to Emitter Voltage Emitter to Base Voltage Collector Current 50 V 5.0 V 100 mA IB Base Current 20 mA 0.5 1.27 2.54 1.77 MAX. 4.2 MAX. 123 1. Emitter 2. Collector 3. Base EIAJ: JEDEC: IEC: SC43B TO92 PA33 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTIC DC Current Gain DC Current Gain Gain Bandwidth Product Collector to Base Capacitance Collector Cutoff Current Emitter Cutoff Current Base to Emitter Voltage Collector Saturation Voltage Base Saturation Voltage SYMBOL hFE1 hFE2 fT Cob ICBO IEBO VBE VCE(sat) VBE(sat) TEST CONDITIONS VCE = 6.0 V, IC = 0.1 mA VCE = 6.0 V, IC = 1.0 mA VCE = 6.0 V, IE = −10 mA VCB = 6.0 V, IE = 0, f = 1.0 MHz VCB = 60 V, IE = 0 A VEB = 5.0 V, IC = 0 A VCE = 6.0 V, IC = 1.0 mA IC = 100 mA, IB = 10 mA IC = 100 mA, IB = 10 mA MIN. 50 90 0.55 TYP. 185 200 250 3.0 0.62 0.15 0.86 MAX. 600 100 100 0.65 0.3 1.0 UNIT MH...