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RKR103BKU

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Silicon Schottky Barrier Diode

PP/MP Datasheet RKR103BKU Silicon Schottky Barrier Diode for Rectifying R07DS0686EJ0100 Rev.1.00 Jun 12, 2012 Feature...


Renesas

RKR103BKU

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PP/MP Datasheet RKR103BKU Silicon Schottky Barrier Diode for Rectifying R07DS0686EJ0100 Rev.1.00 Jun 12, 2012 Features  Low reverse current and suitable for high efficiency rectifying.  Ultra small Resin Package (TURP-FM) is suitable for compact and high-density surface mount design. Ordering Information Part No RKR103BKU # P6 Laser Mark S02 Package Name TURP-FM Package Code PUSF0002ZD-A Taping Abbreviation (Quantity) P6 (4,000pcs / reel) Pin Arrangement Cathode mark Mark 1 S02 2 1. Cathode 2. Anode R07DS0686EJ0100 Rev.1.00 Jun 12, 2012 Page 1 of 5 RKR103BKU Absolute Maximum Ratings Item Symbol Value Repetitive peak reverse voltage VRRM 30 Reverse voltage VR 30 Average rectified current IO *1 *2 1 Non-Repetitive peak forward surge current IFSM *3 4 Junction temperature Tj 150 Storage temperature Tstg –55 to +150 Notes: 1. See Fig.6. With Ceramics board. 2. Ta = 40°C, With Ceramics board (board size: 50 mm  50 mm, Land size 2 mm  2 mm) Short form wave ( = 180°C) VR = 15 V. 3. 10 ms sin wave 1 pulse. PP/MP (Ta = 25C) Unit V V A A C C Electrical Characteristics Item Symbol Min Typ Forward voltage VF1 — — VF3 Reverse current IR1 IR2 Capacitance C — — — — — — — — Thermal resistance Rth(j-a) — 110 — 220 Notes: 1. Ceramics board 2 2 50h × 50w × 0.8t (Ta = 25C) Max Unit Test Condition 0.38 V IF = 100 mA 0.52 IF = 700 mA 5 A VR = 5 V 25 VR = 30 V 30 pF VR = 10 V f = 1 MHz — C/W Ceramic...




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