2SK1482

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1482 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK1482 is N-channel vertical type MOS FET switching device which can be directly driven from an IC operating with a 5 V single power supply. The device featuring low on-state resistance is of the voltage drive type and thus is ideal for driving actuators such as motors, solenoids, and relays. FEATURES Low on-state resistance RDS(on)1 = 0.8 Ω MAX. (VGS = 4 V, ID = 0.5 A) RDS(on)2 = 0.4 Ω MAX. (VGS = 10 V, ID = 0.5 A) Voltage drive at logic level (VGS = 4 V) is possible. Bidirectional zener diode for protection is incorporated in between the gate and the source. Inductive loads can be driven without protective circuit thanks to the improved breakdown voltage between the drain and source. Can be used complementary with the 2SJ196. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) VDSS VGSS 30 V ±20 V Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note ID(DC) ±1.5 A ID(pulse) ±3.0 A Total Power Dissipation (TA = 25°C) PT 750 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Note PW ≤ 10 ms, Duty Cycle ≤ 50% PACKAGE DRAWING (Unit : mm) 5.2 MAX. 12.7 MAX. 5.5 MAX. 0.5 2.54 1.27 123 1.77 MAX. 4.2 MAX. EQUIVALENT CIRCUIT Drain Gate Body Diode Gate Protection Diode Source Remark The diode connected between the gate and source of the tran...