H5N5016PL-E0-E

H5N5016PL-E0-E 500V - 50A - MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 0.108 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°C) Low leakage current High speed switching Built-in fast recovery diode Quality grade: Standard Outline RENESAS Package code: PRSS0003ZN-A, PRSS0003ZC-A (Package name:TO-264A, TO-264) D Datasheet R07DS1200EJ0200 Rev.2.00 Nov.4.2021 1 23 G S 1. Gate 2. Drain 3. Source Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit Drain to source voltage VDSS 500 V Gate to source voltage VGSS ±30 V Drain current ID 50 A Drain peak current ID (pulse)Notes1 200 A Body-drain diode reverse drain current IDR 50 A Body-drain diode reverse drain peak current IDR (pulse)Notes1 200 A Avalanche current IAPNotes3 10 A Avalanche energy EARNotes3 5.5 mJ Channel dissipation PchNotes2 250 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: Continuous heavy condition (e.g. high temperature/voltage/current or high variation of temperature) may affect a reliability even if it is within the absolute maximum ratings. Please consider derating condition for appropriate reliability in reference Renesas Semiconductor Reliability Handbook (Recommendation for Handling and Usage of Semiconductor Devices) and individual reliability data . Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C 3. STch = 25 °C, Tch ≤ 150 °C R07DS1200EJ0200 Rev.2.00 Nov.4.2021 ...