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H5N5016PL-E0-E Datasheet, Equivalent, MOSFET.

MOSFET

MOSFET

 

 

 

Part H5N5016PL-E0-E
Description MOSFET
Feature H5N5016PL-E0-E 500V - 50A - MOS FET High Speed Power Switching Features
• Low on-resistance RDS(on) = 0.
108 Ω typ.
(at ID = 25 A, VGS = 10 V, Ta = 25°C)
• Low leakage current
• High speed switching
• Built-in fast recovery d iode
• Quality grade: Standard Outlin e RENESAS Package code: PRSS0003ZN-A, P RSS0003ZC-A (Package name:TO-264A, TO-2 64) D Datasheet R07DS1200EJ0200 Rev.
2.
00 Nov.
4.
2021 1 23 G S 1.
Gate 2.
Dr ain 3.
Source Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit Drain to source voltage VDSS 5 00 V Gate to source voltage VGSS ± 30 V Drain current ID 50 .
Manufacture Renesas
Datasheet
Download H5N5016PL-E0-E Datasheet
Part H5N5016PL-E0-E
Description MOSFET
Feature H5N5016PL-E0-E 500V - 50A - MOS FET High Speed Power Switching Features
• Low on-resistance RDS(on) = 0.
108 Ω typ.
(at ID = 25 A, VGS = 10 V, Ta = 25°C)
• Low leakage current
• High speed switching
• Built-in fast recovery d iode
• Quality grade: Standard Outlin e RENESAS Package code: PRSS0003ZN-A, P RSS0003ZC-A (Package name:TO-264A, TO-2 64) D Datasheet R07DS1200EJ0200 Rev.
2.
00 Nov.
4.
2021 1 23 G S 1.
Gate 2.
Dr ain 3.
Source Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit Drain to source voltage VDSS 5 00 V Gate to source voltage VGSS ± 30 V Drain current ID 50 .
Manufacture Renesas
Datasheet
Download H5N5016PL-E0-E Datasheet

H5N5016PL-E0-E

H5N5016PL-E0-E
H5N5016PL-E0-E

H5N5016PL-E0-E

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