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HVD359

Renesas

Variable Capacitance Diode

HVD359 Variable Capacitance Diode for VCO Features • High capacitance ratio and good C-V linearity. • To be usable at l...



HVD359

Renesas


Octopart Stock #: O-1492720

Findchips Stock #: 1492720-F

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Description
HVD359 Variable Capacitance Diode for VCO Features High capacitance ratio and good C-V linearity. To be usable at low voltage. Super small Flat Lead Package (SFP) is suitable for surface mount design. Ordering Information Type No. HVD359 Laser Mark G Package Name SFP Pin Arrangement Cathode mark Mark G 1 2 1. Cathode 2. Anode REJ03G0500-0300 Rev.3.00 Jan 24, 2006 Package Code PUSF0002ZB-A Rev.3.00 Jan 24, 2006 page 1 of 4 HVD359 Absolute Maximum Ratings Item Reverse voltage Junction temperature Storage temperature VR Tj Tstg Symbol Value 15 125 −55 to +125 (Ta = 25°C) Unit V °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Reverse current IR1 IR2 Capacitance C1 C4 Capacitance ratio n Series resistance rS ESD-Capability *1    10 nA VR = 10 V   100 VR = 10 V, Ta = 60°C 24.8  29.8 pF VR = 1 V, f = 1 MHz 6.00  8.30 VR = 4 V, f = 1 MHz 3.00    C1/C4   1.50 Ω VR = 4 V, f =100 MHz 200   V C = 200 pF, R = 0 Ω, Both forward and reverse direction 1 pulse. Notes: 1. Failure criterion ; IR ≥ 20 nA at VR =10 V 2. For SFP package, the material of lead is exposed for cutting plane. There for, soldering nature of lead tip part is considered as unquestioned. Please kindly consider soldering nature. Rev.3.00 Jan 24, 2006 page 2 of 4 HVD359 Main Characteristic 10-9 10-10 Reverse current IR (A) 10-11 10-12 Capacitance C (pF) 10-13 0 4 8 12 16 20 Reverse...




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