HAT2168N

HAT2168N Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.3 mΩ typ. (at VGS = 10 V) Power Supply for Server and Telecom (Indoor use) Outline RENESAS Package code: PTSP0008DC-A (Package name: LFPAK-i) 1(S) 2XXX 2(S) 3(S) 8(D) 4(G) 7(D) 4 6(D) G 5(D) 5678 DDDD SSS 12 3 REJ03G1682-0200 Rev.2.00 May 27, 2008 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 θch-C Tch Tstg Ratings 30 ±20 30 120 30 15 22 15 8.33 150 – 55 to + 150 (Ta = 25°C) Unit V V A A A A mJ W °C/W °C °C REJ03G1682-0200 Rev.2.00 May 27, 2008 Page 1 of 6 HAT2168N Electrical Characteristics Item Symbol Min Drain to source breakdown voltage V(BR)DSS 30 Gate to source breakdown voltage V(BR)GSS ±20 Gate to source leak current IGSS — Zero gate voltage drain current IDSS — Gate to source cutoff voltage VGS(off) 1.0 Static drain to source on state RDS(on) — resistance RDS(on) — Forward transfer admittance |yfs| 30 Inp...