B1399

2SB1399 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 123 1. Base 2. Collector 3. Emitter 2 1 ID 1.0 kΩ (Typ) 200 Ω (Typ) 3 2SB1399 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC IC (peak) PC PC * 1 Tj Tstg ID*1 Ratings Unit –120 V –120 V –7 V –10 A –15 A 2 W 30 150 °C –55 to +150 °C 10 A Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Collector to base breakdown V(BR)CBO –120 — voltage Collector to emitter breakdown V(BR)CEO –120 — voltage Emitter to base breakdown V(BR)EBO –7 — voltage Collector cutoff current I CBO — — I CEO — — DC current transfer ratio hFE 1000 — Collector to emitter saturation VCE (sat)1 — — voltage VCE (sat)2 — — Base to emitter saturation VBE (sat)1 — — voltage VBE (sat)2 — — C to E diode forward voltage VD — — Note: 1. Pulse Test. See switching characteristic curve of 2SB955(K). Max Unit — V — V — V –10 µA –10 20000 –1.5 V –3.0 –2.0 V –3.5 3.0 V Test Conditions IC = –0.1 mA, IE = 0 IC = –25 mA, RBE = ∞ IE = –50 mA, IC = 0 VCB = –100 V, IE = 0 VCE = –100 V, RBE = ∞ VCE = –3 V, IC = –5 A*1 IC = –5 A, IB = 10 mA*1 IC = –10 A, IB = –100 mA*1 IC = –5 A, IB = 10 mA*...