FDMS7694

FDMS7694 N-Channel PowerTrench® MOSFET FDMS7694 N-Channel PowerTrench® MOSFET 30 V, 9.5 mΩ Features „ Max rDS(on) = 9.5 mΩ at VGS = 10 V, ID = 13.2 A „ Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10.5 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed ang body diode reverse recovery performance. Applications „ IMVP Vcore Switching for Notebook „ VRM Vcore Switching for Desktop and server „ OringFET / Load Switching „ DC-DC Conversion Top Bottom Pin 1 S S S G D5 D6 4G 3S Power 56 D D DD MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics D7 D8 (Note 4) (Note 1a) (Note 3) (Note 1a) 2S 1S Ratings 30 ±20 20...