2SB1002

2SB1002 Silicon PNP Epitaxial Application Low frequency power amplifier Complementary pair with 2SD1368 Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 REJ03G0660-0200 (Previous ADE-208-1035) Rev.2.00 Aug.10.2005 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 4 *UPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings Item Symbol Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Collector current Collector peak current Collector power dissipation IC iC(peak) *1 PC*2 Junction temperature Tj Storage temperature Tstg Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm) Ratings –70 –50 –6 –1 –1.5 1 150 –55 to +150 (Ta = 25°C) Unit V V V A A W °C °C Rev.2.00 Aug 10, 2005 page 1 of 5 2SB1002 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –70 — — V IC = –10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO –50 — — V IC = –1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –6 — — V IE = –10 µA, IC = 0 Collector cutoff current ICBO — — –0.1 µA VCB = –50 V, IE = 0 Emitter cutoff current IEBO — — –0.1 µA VEB = –4 V, IC = 0 DC current transfer ratio hFE 160 — 320 VCE = –2 V, IC = –0.1 A Collector to emitter saturation voltage VCE(sat) — — –0.6 V IC = –1 A, IB = –0.1 A (Pulse test) Base ...