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FDMS3660S Dataheets PDF



Part Number FDMS3660S
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Asymmetric Dual N-Channel MOSFET
Datasheet FDMS3660S DatasheetFDMS3660S Datasheet (PDF)

FDMS3660S PowerTrench) Power Stage Asymmetric Dual N−Channel MOSFET Description This device includes two specialized N−Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency. Features Q1: N−Channel • Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A • Max rDS(on) = 11 mW at VGS = 4.5 V, ID = 11 A .

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