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FDMS3660S Datasheet, Equivalent, N-Channel MOSFET.

Asymmetric Dual N-Channel MOSFET

Asymmetric Dual N-Channel MOSFET

 

 

 

Part FDMS3660S
Description Asymmetric Dual N-Channel MOSFET
Feature FDMS3660S PowerTrench) Power Stage Asymm etric Dual N−Channel MOSFET Descripti on This device includes two specialized N−Channel MOSFETs in a dual PQFN pac kage.
The switch node has been internal ly connected to enable easy placement a nd routing of synchronous buck converte rs.
The control MOSFET (Q1) and synchro nous SyncFET (Q2) have been designed to provide optimal power efficiency.
Feat ures Q1: N−Channel
• Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A
• Max r DS(on) = 11 mW at VGS = 4.
5 V, ID = 11 A Q2: N−Channel
• Max rDS(on) = 1.
8 mW at VGS = 10 V, ID = 30 A
• Max rD S(on) = 2.
2 mW at VGS = 4.
5 V, .
Manufacture ON Semiconductor
Datasheet
Download FDMS3660S Datasheet
Part FDMS3660S
Description Asymmetric Dual N-Channel MOSFET
Feature FDMS3660S PowerTrench) Power Stage Asymm etric Dual N−Channel MOSFET Descripti on This device includes two specialized N−Channel MOSFETs in a dual PQFN pac kage.
The switch node has been internal ly connected to enable easy placement a nd routing of synchronous buck converte rs.
The control MOSFET (Q1) and synchro nous SyncFET (Q2) have been designed to provide optimal power efficiency.
Feat ures Q1: N−Channel
• Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A
• Max r DS(on) = 11 mW at VGS = 4.
5 V, ID = 11 A Q2: N−Channel
• Max rDS(on) = 1.
8 mW at VGS = 10 V, ID = 30 A
• Max rD S(on) = 2.
2 mW at VGS = 4.
5 V, .
Manufacture ON Semiconductor
Datasheet
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FDMS3660S

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