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FDMS3606AS

ON Semiconductor

Asymmetric Dual N-Channel MOSFET


Description
FDMS3606AS PowerTrench® Power Stage FDMS3606AS PowerTrench® Power Stage 30 V Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel „ Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A „ Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel „ Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 27 A „ Max rDS(on) = 2.8 mΩ at VGS = 4.5 V, ID = 23 A „ Low inductance pack...



ON Semiconductor

FDMS3606AS

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