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FDMS3606AS Datasheet, Equivalent, N-Channel MOSFET.

Asymmetric Dual N-Channel MOSFET

Asymmetric Dual N-Channel MOSFET

 

 

 

Part FDMS3606AS
Description Asymmetric Dual N-Channel MOSFET
Feature FDMS3606AS PowerTrench® Power Stage FD MS3606AS PowerTrench® Power Stage 30 V Asymmetric Dual N-Channel MOSFET Featu res Q1: N-Channel „ Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A „ Max rDS(o n) = 11 mΩ at VGS = 4.
5 V, ID = 11 A Q 2: N-Channel „ Max rDS(on) = 1.
9 mΩ a t VGS = 10 V, ID = 27 A „ Max rDS(on) = 2.
8 mΩ at VGS = 4.
5 V, ID = 23 A „ Low inductance packaging shortens rise/ fall times, resulting in lower switchin g losses „ MOSFET integration enables optimum layout for lower circuit induct ance and reduced switch node ringing „ RoHS Compliant General Description Th is device includes two spec .
Manufacture ON Semiconductor
Datasheet
Download FDMS3606AS Datasheet
Part FDMS3606AS
Description Asymmetric Dual N-Channel MOSFET
Feature FDMS3606AS PowerTrench® Power Stage FD MS3606AS PowerTrench® Power Stage 30 V Asymmetric Dual N-Channel MOSFET Featu res Q1: N-Channel „ Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A „ Max rDS(o n) = 11 mΩ at VGS = 4.
5 V, ID = 11 A Q 2: N-Channel „ Max rDS(on) = 1.
9 mΩ a t VGS = 10 V, ID = 27 A „ Max rDS(on) = 2.
8 mΩ at VGS = 4.
5 V, ID = 23 A „ Low inductance packaging shortens rise/ fall times, resulting in lower switchin g losses „ MOSFET integration enables optimum layout for lower circuit induct ance and reduced switch node ringing „ RoHS Compliant General Description Th is device includes two spec .
Manufacture ON Semiconductor
Datasheet
Download FDMS3606AS Datasheet

FDMS3606AS

FDMS3606AS
FDMS3606AS

FDMS3606AS

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