FDC638P

MOSFET – P-Channel, 2.5 V Specified, POWERTRENCH) -20 V, -4.5 A, 48 mW FDC638P General Description This P−Channel 2.5 V specified MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion. Features −4.5 A, −20 V ♦ RDS(on) = 48 mW @ VGS = −4.5 V ♦ RDS(on) = 65 mW @ VGS = −2.5 V Low Gate Charge (10 nC Typical) High Performance Trench Technology for Extremely Low RDS(on) SUPERSOTt−6 Package: Small Footprint (72% Smaller than Standard SO−8); Low Profile (1 mm Thick) This Device is Pb−Free, Halide Free and is RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit VDSS VGSS ID Drain−Source Voltage Gate−Source Voltage Drain Current − Continuous (Note 1a) − Pulsed −20 V ±8 V A −4.5 −20 PD Power Dissipation for Single Operation W (Note 1a) 1.6 (Note 1b) 0.8 TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (TA = 25°C, unless otherwise noted) Symbol Parameter...