Document
Integrated Load Switch
FDC6329L
Description This device is particularly suited for compact power management
in portable electronic equipment where 2.5 V to 8 V input and 2.5 A output current capability are needed. This load switch integrates a small N−Channel power MOSFET (Q1) which drives a large P−Channel power MOSFET (Q2) in one tiny SUPERSOTTM−6 package.
Features
• VDROP = 0.20 V @ VIN = 5 V, IL = 2.8 A, R(on) = 0.07 W • VDROP = 0.20 V @ VIN = 2.5 V, IL = 1.9 A, R(on) = 0.105 W • Control MOSFET (Q1) Includes Zener Protection for ESD
Ruggedness (> 6 kV Human Body Model)
• High Performance Trench Technology for Extremely Low
On−Resistance
• SUPERSOT−6 Package Design Using Copper Lead Frame for
Superior Thermal and Electrical Capabilities
• This is a Pb−Free and Halide Free Device
VIN,R1 4 ON/OFF 5
R1, C1 6
Q2 Q1
3 VOUT, C1 2 VOUT, C1 1 R2
See Application Circuit (Figure 3) Figure 1.
www.onsemi.com
TSOT−23−6 CASE 419BL
MARKING DIAGRAM
&E&Y &.329&G
&E
= Designates Space
&Y
= Binary Calendar Year Coding Scheme
&.
= Pin One Dot
329
= Specific Device Code
&G
= Date Code
ORDERING INFORMATION
Device FDC6329L
Package
TSOT−23−6 (Pb−Free)
Shipping†
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
VDROP
+
−
IN
OUT
ON/OFF Figure 2. Equivalent Circuit
© Semiconductor Components Industries, LLC, 1998
1
June, 2021 − Rev. 4
Publication Order Number: FDC6329L/D
FDC6329L
ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Unit
VIN VON/OFF
IL
Input Voltage Range (Note 1) On/Off Voltage Range Load Current − Continuous (Note 2) Load Current − Pulsed
2.5−8
V
1.5−8
V
2.5
A
10
PD TJ, TSTG
ESD
Maximum Power Dissipation (Note 2) Operating and Storage Temperature Range Electrostatic Discharge Rating MIL−STD−883D Human Body Model (100 pF / 1500 W)
0.7
W
−55 to 150
°C
6
kV
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS TA = 25°C unless otherwise noted
Symbol
Parameter
RqJA
Thermal Resistance, Junction−to−Ambient (Note 2)
RqJC
Thermal Resistance, Junction−to−Case (Note 2)
Value 180 60
Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Unit
OFF CHARACTERISTICS
IFL
Forward Leakage Current
ON CHARACTERISTICS (Note 3)
VIN = 8 V, VON/OFF = 0 V
−
−
1
mA
VDROP
Conduction Voltage
VIN = 5 V, VON/OFF = 3.3 V, IL = 2.8 A
−
0.12
0.2
V
VIN = 2.5 V, VON/OFF = 3.3 V, IL = 1.9 A
−
0.14
0.2
RDS(on)
Q2 − Static On−Resistance VGS = −5 V, ID = −2.5 A
−
0.047 0.07
W
VGS = −2.5 V, ID = −2.0 A
−
0.073 0.105
IL
Load Current
VDROP = 0.2 V, VIN = 5 V, VON/OFF = 3.3 V
2.8
.