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FDC638APZ Datasheet, Equivalent, P-Channel MOSFET.

P-Channel MOSFET

P-Channel MOSFET

 

 

 

Part FDC638APZ
Description P-Channel MOSFET
Feature FDC638APZ P-Channel 2.
5V PowerTrench® S pecified MOSFET FDC638APZ P-Channel 2.
5V PowerTrench® Specified MOSFET –2 0V, –4.
5A, 43mΩ Features „ Max rDS (on) = 43mΩ at VGS = –4.
5V, ID = 4.
5A „ Max rDS(on) = 68mΩ at VGS = –2.
5V, ID = –3.
8A „ Low gate charg e (8nC typical).
„ High performance tr ench technology for extremely low rDS(o n).
„ SuperSOTTM –6 package:small fo otprint (72% smaller than standard SO 8) low profile (1mm thick).
„ RoHS Co mpliant General Description This P-Cha nnel 2.
5V specified MOSFET is produced using ON Semiconductor’s advanced Pow erTrench® process that has been especi ally tai .
Manufacture ON Semiconductor
Datasheet
Download FDC638APZ Datasheet
Part FDC638APZ
Description P-Channel MOSFET
Feature FDC638APZ P-Channel 2.
5V PowerTrench® S pecified MOSFET FDC638APZ P-Channel 2.
5V PowerTrench® Specified MOSFET –2 0V, –4.
5A, 43mΩ Features „ Max rDS (on) = 43mΩ at VGS = –4.
5V, ID = 4.
5A „ Max rDS(on) = 68mΩ at VGS = –2.
5V, ID = –3.
8A „ Low gate charg e (8nC typical).
„ High performance tr ench technology for extremely low rDS(o n).
„ SuperSOTTM –6 package:small fo otprint (72% smaller than standard SO 8) low profile (1mm thick).
„ RoHS Co mpliant General Description This P-Cha nnel 2.
5V specified MOSFET is produced using ON Semiconductor’s advanced Pow erTrench® process that has been especi ally tai .
Manufacture ON Semiconductor
Datasheet
Download FDC638APZ Datasheet

FDC638APZ

FDC638APZ
FDC638APZ

FDC638APZ

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