FDC638APZ

MOSFET – P-Channel, 2.5 V Specified, POWERTRENCH) -20 V, -4.5 A, 43 mW FDC638APZ General Description This P−Channel 2.5 V specified MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion. Features Max rDS(on) = 43 mW at VGS = −4.5 V, ID = −4.5 A Max rDS(on) = 68 mW at VGS = −2.5 V, ID = −3.8 A Low Gate Charge (8 nC typical) High Performance Trench Technology for Extremely Low rDS(on) SUPERSOTt−6 Package: Small Footprint (72% smaller than Standard SO−8) Low Profile (1 mm thick) This Device is Pb−Free, Halide Free and is RoHS Compliant Application DC−DC Conversion MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Units VDS Drain to Source Voltage VGS Gate to Source Voltage −20 V ±12 V ID Drain Current Continuous (Note 1a) −4.5 A Pulsed −20 PD Power Dissipation (Note 1a) (Note 1b) 1.6 W 0.8 TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter R...