FDC610PZ

FDC610PZ P-Channel PowerTrench® MOSFET FDC610PZ P-Channel PowerTrench® MOSFET –30V, –4.9A, 42mΩ Features „ Max rDS(on) = 42mΩ at VGS = –10V, ID = –4.9A „ Max rDS(on) = 75mΩ at VGS = –4.5V, ID = –3.7A „ Low gate charge (17nC typical). „ High performance trench technology for extremely low rDS(on). „ SuperSOTTM –6 package: small footprint (72% smaller than standard SO–8) low profile (1mm thick). „ RoHS Compliant General Description This P-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion. Application „ DC - DC Conversion S D D Pin 1 G D D SuperSOTTM -6 D1 D2 G 33 6D 5D 4S MOSFET Maximum Ratings TA= 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 1a) (Note 1b) Ratings –30 ±25 –4.9 –20 1.6 0.8 –55 to +150 Units V V A W °C RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1a) 78 (Note 1b) 156 °C/W Device Marking .610Z Device FDC610PZ Pa...