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FDC610PZ Datasheet, Equivalent, P-Channel MOSFET.

P-Channel MOSFET

P-Channel MOSFET

 

 

 

Part FDC610PZ
Description P-Channel MOSFET
Feature FDC610PZ P-Channel PowerTrench® MOSFET FDC610PZ P-Channel PowerTrench® MOSFE T –30V, –4.
9A, 42mΩ Features „ M ax rDS(on) = 42mΩ at VGS = –10V, ID = –4.
9A „ Max rDS(on) = 75mΩ at V GS = –4.
5V, ID = –3.
7A „ Low gate charge (17nC typical).
„ High performa nce trench technology for extremely low rDS(on).
„ SuperSOTTM –6 package: s mall footprint (72% smaller than standa rd SO–8) low profile (1mm thick).
„ RoHS Compliant General Description Thi s P-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench ® process that has been especially tai lored to minimize the on-state resistan ce and y .
Manufacture ON Semiconductor
Datasheet
Download FDC610PZ Datasheet
Part FDC610PZ
Description P-Channel MOSFET
Feature FDC610PZ P-Channel PowerTrench® MOSFET FDC610PZ P-Channel PowerTrench® MOSFE T –30V, –4.
9A, 42mΩ Features „ M ax rDS(on) = 42mΩ at VGS = –10V, ID = –4.
9A „ Max rDS(on) = 75mΩ at V GS = –4.
5V, ID = –3.
7A „ Low gate charge (17nC typical).
„ High performa nce trench technology for extremely low rDS(on).
„ SuperSOTTM –6 package: s mall footprint (72% smaller than standa rd SO–8) low profile (1mm thick).
„ RoHS Compliant General Description Thi s P-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench ® process that has been especially tai lored to minimize the on-state resistan ce and y .
Manufacture ON Semiconductor
Datasheet
Download FDC610PZ Datasheet

FDC610PZ

FDC610PZ
FDC610PZ

FDC610PZ

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