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FDC6301N Datasheet, Equivalent, Digital FET.

Dual N-Channel Digital FET

Dual N-Channel Digital FET

 

 

 

Part FDC6301N
Description Dual N-Channel Digital FET
Feature FDC6301N Dual N-Channel , Digital FET G eneral Description These dual N-Channel logic level enhancement mode field eff ect transistors are produced using ON S emiconductor 's proprietary, high cell density, DMOS technology.
This very hig h density process is especially tailore d to minimize on-state resistance.
This device has been designed especially fo r low voltage applications as a replace ment for digital transistors.
Since bia s resistors are not required, these N-C hannel FET's can replace several digita l transistors, with a variety of bias r esistors.
Features 25 V, 0.
22 A contin uous, 0.
5 A Pe .
Manufacture ON Semiconductor
Datasheet
Download FDC6301N Datasheet
Part FDC6301N
Description Dual N-Channel Digital FET
Feature FDC6301N Dual N-Channel , Digital FET G eneral Description These dual N-Channel logic level enhancement mode field eff ect transistors are produced using ON S emiconductor 's proprietary, high cell density, DMOS technology.
This very hig h density process is especially tailore d to minimize on-state resistance.
This device has been designed especially fo r low voltage applications as a replace ment for digital transistors.
Since bia s resistors are not required, these N-C hannel FET's can replace several digita l transistors, with a variety of bias r esistors.
Features 25 V, 0.
22 A contin uous, 0.
5 A Pe .
Manufacture ON Semiconductor
Datasheet
Download FDC6301N Datasheet

FDC6301N

FDC6301N
FDC6301N

FDC6301N

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