01N30

UNISONIC TECHNOLOGIES CO., LTD 01N30 Preliminary 0.1A, 300V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 01N30 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance.  FEATURES * RDS(ON) ≤ 9.0Ω @ VGS=10V, ID=0.05A * High switching speed * 100% avalanche tested  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 01N30L-AE3-R 01N30G-AE3-R Note: Pin Assignment: G: Gate S: Source D: Drain Package SOT-23 Pin Assignment 1 2 3 G S D Packing Tape Reel  MARKING 01N30 www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 4 QW-R205-357.a 01N30 Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 300 V VGSS ±30 V Continuous Drain Current Avalanche Current ID 0.1 A IAR 0.1 A Power Dissipation Junction Temperature PD 0.3 W TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature.  ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current...