2N5088

2N5088 2N5089 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5088 and 2N5089 are silicon NPN transistors designed for low level, low noise amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS ICBO VCB=20V ICBO VCB=15V IEBO VEB=3.0V IEBO VEB=4.5V BVCBO IC=100μA BVCEO IC=1.0mA VCE(SAT) IC=10mA, IB=1.0mA VBE(ON) VCE=5.0V, IC=10mA hFE VCE=5.0V, IC=0.1mA hFE VCE=5.0V, IC=1.0mA hFE VCE=5.0V, IC=10mA hfe VCE=5.0V, IC=1.0mA, f=1.0kHz fT VCE=5.0V, IC=0.5mA, f=20MHz Cob VCB=5.0V, IE=0, f=100kHz Cib VEB=0.5V, IC=0, f=100kHz NF VCE=5.0V, IC=100μA, RS=10kΩ, f=10Hz to 15.7kHz SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg JA JC 2N5088 35 2N5089 30 30 25 4.5 50 625 -65 to +150 200 83.3 2N5088 MIN MAX - 50 - - - 50 - 100 35 - 30 - - 0.5 - 0.8 300 900 350 - 300 - 350 1.4K 50 - - 4.0 - 15 2N5089 MIN MAX - - - 50 - 50 - 100 30 - 25 - - 0.5 - 0.8 400 1.2K 450 - 400 - 450 1.8K 50 - - 4.0 - 15 - 3.0 - 2.0 UNITS V V V mA mW °C °C/W °C/W UNITS nA nA nA nA V V V V MHz pF pF dB R1 (20-June 2016) 2N5088 2N5089 SILICON NPN TRANSISTORS TO-92 CASE - MECHANICA...