2N5089 | Central Semiconductor
SILICON NPN TRANSISTOR
2N5088 2N5089
SILICON NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5088 and 2N5089 are silicon NPN transistors designed for low level, low noise amplifier applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipatio.
- 2N5089 | Central Semiconductor
- SILICON NPN TRANSISTOR
- 2N5088 2N5089
SILICON NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL.
- 2N5088 2N5089
SILICON NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5088 and 2N5089 are silicon NPN transistors designed for low level, low noise amplifier applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Therm.
- 2N5089 | SEMTECH
- NPN Silicon Epitaxial Planar Transistor
- ST 2N5088 / 2N5089
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applicatio.
- ST 2N5088 / 2N5089
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor 2N5086 and 2N5087 are recommended.
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperatu.
- 2N5089 | Samsung
- NPN EPITAXIAL SILICON TRANSISTOR
- 2N5088/5089
NPN EPITAXIAL SILICON TRANSISTOR
AMPLIFIER TRANSISTOR
• Collector-Emitter Voltage: VCE.
- 2N5088/5089
NPN EPITAXIAL SILICON TRANSISTOR
AMPLIFIER TRANSISTOR
• Collector-Emitter Voltage: VCEO= 2N5088: 30V 2N5089: 25V
• Collector Dissipation: PC (max)=625mW
ABSOLUTE MAXIMUM RATINGS (TA=25 )
Characteristic
Symbol
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature
:2N5088 2N5089 :2N5088 2N5089
VCBO
VCEO
VEBO IC PC TJ TSTG
30.
- 2N5089 | TAITRON
- Small Signal Low Noise Transistors
- Small Signal Low Noise Transistors (NPN)
2N5088/2N5089
Small Signal Low Noise Transistors (NPN)
F.
- Small Signal Low Noise Transistors (NPN)
2N5088/2N5089
Small Signal Low Noise Transistors (NPN)
Features
• NPN silicon epitaxial transistor for switching and amplifier applications
• This device is designed for low noise, high gain, general purpose applications at collector currents from 1µA to 50mA
• RoHS compliance
Mechanical Data
Case: Terminals:
Weight:
TO-92, Plastic Package Solderable per MIL-STD-202G, Method 208
0.18 gram
TO-92
Abs.
- 2N5089 | CDIL
- NPN SILICON EPITAXIAL TRANSISTORS
- Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILIC.
- Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON EPITAXIAL TRANSISTORS
2N5088 2N5089 TO-92 CBE
EBC
Amplifier Transistors
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
2N5088
Collector -Base Voltage
VCBO
35
Collector -Emitter Voltage
VCE0
30
Emitter -Base Voltage
VEBO
Collector Current- Continuous
IC
Power Dissipation@ Ta=25 deg C PD
Derate Above 25 deg C
Power Dissipation@ Tc=.