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2N5089 Datasheet > NPN TRANSISTOR

2N5089 | Central Semiconductor

SILICON NPN TRANSISTOR

2N5088 2N5089 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5088 and 2N5089 are silicon NPN transistors designed for low level, low noise amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipatio.



Download 2N5089 Datasheet
Download 2N5089 Datasheet


2N5089



2N5089 | Central Semiconductor
SILICON NPN TRANSISTOR
Download 2N5089 Datasheet
Download 2N5089 Datasheet
2N5088 2N5089 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL.
2N5088 2N5089 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5088 and 2N5089 are silicon NPN transistors designed for low level, low noise amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Therm.


2N5089 | SEMTECH
NPN Silicon Epitaxial Planar Transistor
Download 2N5089 Datasheet
Download 2N5089 Datasheet
ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applicatio.
ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor 2N5086 and 2N5087 are recommended. Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperatu.


2N5089 | Samsung
NPN EPITAXIAL SILICON TRANSISTOR
Download 2N5089 Datasheet
Download 2N5089 Datasheet
2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCE.
2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCEO= 2N5088: 30V 2N5089: 25V • Collector Dissipation: PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature :2N5088 2N5089 :2N5088 2N5089 VCBO VCEO VEBO IC PC TJ TSTG 30.


2N5089 | TAITRON
Small Signal Low Noise Transistors
Download 2N5089 Datasheet
Download 2N5089 Datasheet
Small Signal Low Noise Transistors (NPN) 2N5088/2N5089 Small Signal Low Noise Transistors (NPN) F.
Small Signal Low Noise Transistors (NPN) 2N5088/2N5089 Small Signal Low Noise Transistors (NPN) Features • NPN silicon epitaxial transistor for switching and amplifier applications • This device is designed for low noise, high gain, general purpose applications at collector currents from 1µA to 50mA • RoHS compliance Mechanical Data Case: Terminals: Weight: TO-92, Plastic Package Solderable per MIL-STD-202G, Method 208 0.18 gram TO-92 Abs.


2N5089 | CDIL
NPN SILICON EPITAXIAL TRANSISTORS
Download 2N5089 Datasheet
Download 2N5089 Datasheet
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILIC.
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTORS 2N5088 2N5089 TO-92 CBE EBC Amplifier Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5088 Collector -Base Voltage VCBO 35 Collector -Emitter Voltage VCE0 30 Emitter -Base Voltage VEBO Collector Current- Continuous IC Power Dissipation@ Ta=25 deg C PD Derate Above 25 deg C Power Dissipation@ Tc=.






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