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2N5089 Datasheet, Equivalent, NPN TRANSISTOR.SILICON NPN TRANSISTOR SILICON NPN TRANSISTOR |
| Part | 2N5089 |
|---|---|
| Description | SILICON NPN TRANSISTOR |
| Feature | 2N5088 2N5089
SILICON NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m DES CRIPTION: The CENTRAL SEMICONDUCTOR 2N5 088 and 2N5089 are silicon NPN transist ors designed for low level, low noise a mplifier applications. MARKING: FULL PA RT NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Coll ector-Emitter Voltage Emitter-Base Volt age Continuous Collector Current Power Dissipation Operating and Storage Junct ion Temperature Thermal Resistance Ther mal Resistance ELECTRICAL CHARACTERIST ICS: (TA=25°C) SYMBOL TEST CONDITIONS ICBO VCB=20V ICBO VCB=15V IEBO VE B=3. 0V IEBO VE . |
| Manufacture | Central Semiconductor |
| Datasheet |
| Part | 2N5089 |
|---|---|
| Description | SILICON NPN TRANSISTOR |
| Feature | 2N5088 2N5089
SILICON NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m DES CRIPTION: The CENTRAL SEMICONDUCTOR 2N5 088 and 2N5089 are silicon NPN transist ors designed for low level, low noise a mplifier applications. MARKING: FULL PA RT NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Coll ector-Emitter Voltage Emitter-Base Volt age Continuous Collector Current Power Dissipation Operating and Storage Junct ion Temperature Thermal Resistance Ther mal Resistance ELECTRICAL CHARACTERIST ICS: (TA=25°C) SYMBOL TEST CONDITIONS ICBO VCB=20V ICBO VCB=15V IEBO VE B=3. 0V IEBO VE . |
| Manufacture | Central Semiconductor |
| Datasheet |
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