NVMFS5C468NL

DATA SHEET www.onsemi.com MOSFET – Power, Single N-Channel 40 V, 10.3 mW, 37 A NVMFS5C468NL V(BR)DSS 40 V RDS(ON) MAX 10.3 mW @ 10 V 17.6 mW @ 4.5 V ID MAX 37 A D (5,6) Features  Small Footprint (5x6 mm) for Compact Design  Low RDS(on) to Minimize Conduction Losses  Low QG and Capacitance to Minimize Driver Losses  NVMFS5C468NLWF − Wettable Flank Option for Enhanced Optical Inspection  AEC−Q101 Qualified and PPAP Capable  These Devices are Pb−Free and are RoHS Compliant G (4) S (1,2,3) N−CHANNEL MOSFET MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS 20 V Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1) TC = 25C ID Steady TC = 100C State TC = 25C PD TC = 100C 37 A 26 28 W 14 Continuous Drain Current RqJA (Notes 1, 2, 3) Power Dissipation RqJA (Notes 1 & 2) TA = 25C ID Steady TA = 100C State TA = 25C PD TA = 100C 13 A 9.2 3.5 W 1.7 Pulsed Drain Current TA = 25C, tp = 10 ms IDM 190 A Operating Junction and Storage Temperature TJ, Tstg − 55 to C + 175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 2 A) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) IS 31 A EAS 95 mJ TL 260 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assu...