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NVMFS5C468NL Datasheet, Equivalent, Power MOSFET.Power MOSFET Power MOSFET |
　
　
　
| Part | NVMFS5C468NL |
|---|---|
| Description | Power MOSFET |
| Feature | NVMFS5C468NL
MOSFET – Power, Single N -Channel
40 V, 10. 3 mW, 37 A Features • Small Footprint (5x6 mm) for Compac t Design • Low RDS(on) to Minimize Co nduction Losses • Low QG and Capacita nce to Minimize Driver Losses • NVMFS 5C468NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC− Q101 Qualified and PPAP Capable • The se Devices are Pb−Free and are RoHS C ompliant www. onsemi. com V(BR)DSS 40 V RDS(ON) MAX 10. 3 mW @ 10 V 17. 6 mW @ 4. 5 V ID MAX 37 A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Param eter Symbol Value Unit Drain−to−S ource Voltage VDSS 40 V Gate−to∠’Sou . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | NVMFS5C468NL |
|---|---|
| Description | Power MOSFET |
| Feature | NVMFS5C468NL
MOSFET – Power, Single N -Channel
40 V, 10. 3 mW, 37 A Features • Small Footprint (5x6 mm) for Compac t Design • Low RDS(on) to Minimize Co nduction Losses • Low QG and Capacita nce to Minimize Driver Losses • NVMFS 5C468NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC− Q101 Qualified and PPAP Capable • The se Devices are Pb−Free and are RoHS C ompliant www. onsemi. com V(BR)DSS 40 V RDS(ON) MAX 10. 3 mW @ 10 V 17. 6 mW @ 4. 5 V ID MAX 37 A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Param eter Symbol Value Unit Drain−to−S ource Voltage VDSS 40 V Gate−to∠’Sou . |
| Manufacture | ON Semiconductor |
| Datasheet |
　
　
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