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2N6338 Datasheet, Equivalent, Silicon Transistors.

High-Power NPN Silicon Transistors

High-Power NPN Silicon Transistors

 

 

 

Part 2N6338
Description High-Power NPN Silicon Transistors
Feature 2N6338, 2N6341 High-Power NPN Silicon T ransistors .
.
.
designed for use in i ndustrial−military power amplifier an d switching circuit applications.

• High Collector−Emitter Sustaining Vo ltage − VCEO(sus) = 100 Vdc (Min) 2N6338 = 150 Vdc (Min) − 2N6341 High DC Current Gain − hFE = 30 120 @ IC = 10 Adc = 12 (Min) @ IC = 25 Adc
• Low Collector−Emitter Sat uration Voltage − VCE(sat) = 1.
0 Vdc (Max) @ IC = 10 Adc
• Fast Switching Times @ IC = 10 Adc tr = 0.
3 ms (Max) ts = 1.
0 ms (Max) tf = 0.
25 ms (Max)
• Pb−Free Packages are Available ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *MAXIMUM RATINGS ÎÎÎÎÎÎÎ .
Manufacture ON Semiconductor
Datasheet
Download 2N6338 Datasheet
Part 2N6338
Description High-Power NPN Silicon Transistors
Feature 2N6338, 2N6341 High-Power NPN Silicon T ransistors .
.
.
designed for use in i ndustrial−military power amplifier an d switching circuit applications.

• High Collector−Emitter Sustaining Vo ltage − VCEO(sus) = 100 Vdc (Min) 2N6338 = 150 Vdc (Min) − 2N6341 High DC Current Gain − hFE = 30 120 @ IC = 10 Adc = 12 (Min) @ IC = 25 Adc
• Low Collector−Emitter Sat uration Voltage − VCE(sat) = 1.
0 Vdc (Max) @ IC = 10 Adc
• Fast Switching Times @ IC = 10 Adc tr = 0.
3 ms (Max) ts = 1.
0 ms (Max) tf = 0.
25 ms (Max)
• Pb−Free Packages are Available ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *MAXIMUM RATINGS ÎÎÎÎÎÎÎ .
Manufacture ON Semiconductor
Datasheet
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2N6338

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