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2N6338 Datasheet, Equivalent, Silicon Transistors.High-Power NPN Silicon Transistors High-Power NPN Silicon Transistors |
　
　
　
| Part | 2N6338 |
|---|---|
| Description | High-Power NPN Silicon Transistors |
| Feature | 2N6338, 2N6341
High-Power NPN Silicon T ransistors
. . . designed for use in i ndustrial−military power amplifier an d switching circuit applications. • High Collector−Emitter Sustaining Vo ltage − VCEO(sus) = 100 Vdc (Min) ∠’ 2N6338 = 150 Vdc (Min) − 2N6341 â €¢ High DC Current Gain − hFE = 30 â ˆ’ 120 @ IC = 10 Adc = 12 (Min) @ IC = 25 Adc • Low Collector−Emitter Sat uration Voltage − VCE(sat) = 1. 0 Vdc (Max) @ IC = 10 Adc • Fast Switching Times @ IC = 10 Adc tr = 0. 3 ms (Max) ts = 1. 0 ms (Max) tf = 0. 25 ms (Max) • Pb−Free Packages are Available ÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽ *MAXIMUM RATINGS ÃŽÃŽÃŽÃŽÃŽÃŽÃŽ . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | 2N6338 |
|---|---|
| Description | High-Power NPN Silicon Transistors |
| Feature | 2N6338, 2N6341
High-Power NPN Silicon T ransistors
. . . designed for use in i ndustrial−military power amplifier an d switching circuit applications. • High Collector−Emitter Sustaining Vo ltage − VCEO(sus) = 100 Vdc (Min) ∠’ 2N6338 = 150 Vdc (Min) − 2N6341 â €¢ High DC Current Gain − hFE = 30 â ˆ’ 120 @ IC = 10 Adc = 12 (Min) @ IC = 25 Adc • Low Collector−Emitter Sat uration Voltage − VCE(sat) = 1. 0 Vdc (Max) @ IC = 10 Adc • Fast Switching Times @ IC = 10 Adc tr = 0. 3 ms (Max) ts = 1. 0 ms (Max) tf = 0. 25 ms (Max) • Pb−Free Packages are Available ÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽÃŽ *MAXIMUM RATINGS ÃŽÃŽÃŽÃŽÃŽÃŽÃŽ . |
| Manufacture | ON Semiconductor |
| Datasheet |
　
　
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