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TBD62004AFNG Datasheet, Equivalent, transistor array.DMOS transistor array DMOS transistor array |
| Part | TBD62004AFNG |
|---|---|
| Description | DMOS transistor array |
| Feature | TBD62003A series, TBD62004A series
TOSH IBA BiCD Integrated Circuit Silicon Mon olithic
TBD62003APG, TBD62003AFG, TBD62 003AFNG, TBD62003AFWG TBD62004APG, TBD6 2004AFG, TBD62004AFNG, TBD62004AFWG
7c hannel sink type DMOS transistor array
TBD62003A series and TBD62004A series a re DMOS transistor array with 7 circuit s. It has a clamp diode for switching i nductive loads built-in in each output. Please be careful about thermal condit ions during use. TBD62003APG,TBD62004A PG Features • 7 circuits built-in • High voltage • High current : VO UT = 50 V (MAX) : IOUT = 500 mA/ch (MAX ) • Input voltage(o . |
| Manufacture | Toshiba |
| Datasheet |
| Part | TBD62004AFNG |
|---|---|
| Description | DMOS transistor array |
| Feature | TBD62003A series, TBD62004A series
TOSH IBA BiCD Integrated Circuit Silicon Mon olithic
TBD62003APG, TBD62003AFG, TBD62 003AFNG, TBD62003AFWG TBD62004APG, TBD6 2004AFG, TBD62004AFNG, TBD62004AFWG
7c hannel sink type DMOS transistor array
TBD62003A series and TBD62004A series a re DMOS transistor array with 7 circuit s. It has a clamp diode for switching i nductive loads built-in in each output. Please be careful about thermal condit ions during use. TBD62003APG,TBD62004A PG Features • 7 circuits built-in • High voltage • High current : VO UT = 50 V (MAX) : IOUT = 500 mA/ch (MAX ) • Input voltage(o . |
| Manufacture | Toshiba |
| Datasheet |
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