2N4403G

2N4403 Preferred Device General Purpose Transistors PNP Silicon Features Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD 40 Vdc 40 Vdc 5.0 Vdc 600 mAdc 625 mW 5.0 mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 W 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. http://onsemi.com COLLECTOR 3 2 BASE 1 EMITTER TO−92 CASE 29 STYLE 1 123 STRAIGHT LEAD BULK PACK 1 2 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAM 2N 4403 AYWW G G 2N4403 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ©...