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4N28M Dataheets PDF



Part Number 4N28M
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Phototransistor Optocouplers
Datasheet 4N28M Datasheet4N28M Datasheet (PDF)

6-Pin General Purpose Phototransistor Optocouplers 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M Description The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a standard plastic 6−pin dual−in−line package. Features • Minimum Current Transfer Ratio at IF = 10 mA, VCE = 10 V: ♦ 10% for 4N27M and 4N28M ♦ 20% for 4N25M and 4N26M ♦ 100% for 4N35M and 4N36M and 4N37M • Safety and Regulatory Approvals: ♦ UL1577, 4,170 VACRMS fo.

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6-Pin General Purpose Phototransistor Optocouplers 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M Description The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a standard plastic 6−pin dual−in−line package. Features • Minimum Current Transfer Ratio at IF = 10 mA, VCE = 10 V: ♦ 10% for 4N27M and 4N28M ♦ 20% for 4N25M and 4N26M ♦ 100% for 4N35M and 4N36M and 4N37M • Safety and Regulatory Approvals: ♦ UL1577, 4,170 VACRMS for 1 Minute ♦ DIN−EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage Applications • Power Supply Regulators • Digital Logic Inputs • Microprocessor Inputs DATA SHEET www.onsemi.com 6 1 6 1 PDIP6 CASE 646BX PDIP6 S SUFFIX CASE 646BY 6 1 PDIP6 T SUFFIX CASE 646BZ MARKING DIAGRAM ON 4N25 VXYYQ ON 4N25 V X YY Q = Logo = Specific Device Code = DIN EN/IEC60747−5−5 Option (only appears on component ordered with this option) = One−Digit Year Code = Digit Work Week = Assembly Package Code SCHEMATIC ANODE 1 6 BASE CATHODE 2 5 COLLECTOR N/C 3 4 EMITTER ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. © Semiconductor Components Industries, LLC, 2005 1 September, 2021 − Rev. 2 Publication Order Number: 4N37M/D 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.) Parameter Characteristics Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage Climatic Classification <150 VRMS <300 VRMS I–IV I–IV 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index 175 Symbol Parameter VPR Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC VIORM VIOTM Maximum Working Insulation Voltage Highest Allowable Over−Voltage External Creepage External Clearance External Clearance (for Option TV, 0.4” Lead Spacing) DTI Distance Through Insulation (Insulation Thickness) TS Case Temperature (Note 1) IS,INPUT Input Current (Note 1) PS,OUTPUT Output Power (Note 1) RIO Insulation Resistance at TS, VIO = 500 V (Note 1) 1. Safety limit values – maximum values allowed in the event of a failure. Value 1360 1594 850 6000 ≥7 ≥7 ≥10 ≥0.5 175 350 800 >109 Unit Vpeak Vpeak Vpeak Vpeak mm mm mm mm °C mA mW W www.onsemi.com 2 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M ABSOLUTE MAXIMUM RATINGS Symbol Parameter Max Unit TOTAL DEVICE TSTG TOPR TJ TSOL PD Storage Temperature Operating Temperature Junction Temperature Lead Solder Temperature Total Device Power Dissipation @ TA = 25°C Derate Above 25°C −40 to +125 −40 to +100 −40 to +125 260 for 10 seconds 270 2.94 °C °C °C °C mW mW/°C EMITTER IF VR IF(pk) PD DC / Average Forward Input Current Reverse Input Voltage Forward Current – Peak (300 ms, 2% Duty Cycle) LED Power Dissipation @ TA = 25°C Derate Above 25°C 60 mA 6 V 3 A 120 mW 1.41 mW/°C DETECTOR VCEO Collector−to−Emitter Voltage 30 V VCBO Collector−to−Base Voltage 70 V VECO Emitter−to−Collector Voltage 7 V PD Detector Power Dissipation @ TA = 25°C 150 mW Derate Above 25°C 1.76 mW/°C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com 3 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M ELECTRICAL CHARACTERISTICS − INDIVIDUAL COMPONENT CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Unit EMITTER VF Input Forward Voltage IF = 10 mA − 1.18 1.50 V IR Reverse Leakage Current DETECTOR VR = 6.0 V − 0.001 10 mA BVCEO Collector−to−Emitter Breakdown Voltage IC = 1.0 mA, IF = 0 30 100 − V BVCBO Collector−to−Base Breakdown Voltage IC = 100 mA, IF = 0 70 120 − V BVECO Emitter−to−Collector Breakdown Voltage IE = 100 mA, IF = 0 7 10 − V ICEO Collector−to−Emitter Dark Current VCE = 10 V, IF = 0 − 1 50 nA ICBO Collector−to−Base Dark Current VCB = 10 V − − 20 nA CCE Capacitance VCE = 0 V, f = 1 MHz − 8 − pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ELECTRICAL CHARACTERISTICS − TRANSFER CHARACTERISTICS (TA = 25°C unless otherwise no.


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