Document
6-Pin General Purpose Phototransistor Optocouplers
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M
Description The general purpose optocouplers consist of a gallium arsenide
infrared emitting diode driving a silicon phototransistor in a standard plastic 6−pin dual−in−line package.
Features
• Minimum Current Transfer Ratio at IF = 10 mA, VCE = 10 V:
♦ 10% for 4N27M and 4N28M ♦ 20% for 4N25M and 4N26M ♦ 100% for 4N35M and 4N36M and 4N37M
• Safety and Regulatory Approvals:
♦ UL1577, 4,170 VACRMS for 1 Minute ♦ DIN−EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage
Applications
• Power Supply Regulators • Digital Logic Inputs • Microprocessor Inputs
DATA SHEET www.onsemi.com
6 1
6 1
PDIP6 CASE 646BX
PDIP6 S SUFFIX CASE 646BY
6 1
PDIP6 T SUFFIX CASE 646BZ
MARKING DIAGRAM
ON 4N25 VXYYQ
ON 4N25 V
X YY Q
= Logo = Specific Device Code = DIN EN/IEC60747−5−5 Option (only
appears on component ordered with this option) = One−Digit Year Code = Digit Work Week = Assembly Package Code
SCHEMATIC
ANODE 1
6 BASE
CATHODE 2
5 COLLECTOR
N/C 3
4 EMITTER
ORDERING INFORMATION
See detailed ordering and shipping information on page 8 of this data sheet.
© Semiconductor Components Industries, LLC, 2005
1
September, 2021 − Rev. 2
Publication Order Number: 4N37M/D
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M
SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.)
Parameter
Characteristics
Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage
Climatic Classification
<150 VRMS <300 VRMS
I–IV I–IV 55/100/21
Pollution Degree (DIN VDE 0110/1.89)
2
Comparative Tracking Index
175
Symbol
Parameter
VPR
Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test
with tm = 10 s, Partial Discharge < 5 pC
Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC
VIORM VIOTM
Maximum Working Insulation Voltage Highest Allowable Over−Voltage External Creepage
External Clearance
External Clearance (for Option TV, 0.4” Lead Spacing)
DTI
Distance Through Insulation (Insulation Thickness)
TS
Case Temperature (Note 1)
IS,INPUT Input Current (Note 1)
PS,OUTPUT Output Power (Note 1)
RIO
Insulation Resistance at TS, VIO = 500 V (Note 1)
1. Safety limit values – maximum values allowed in the event of a failure.
Value 1360
1594
850 6000
≥7 ≥7 ≥10 ≥0.5 175 350 800 >109
Unit Vpeak
Vpeak
Vpeak Vpeak mm mm mm mm
°C mA mW W
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4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Max
Unit
TOTAL DEVICE
TSTG TOPR
TJ TSOL PD
Storage Temperature Operating Temperature Junction Temperature Lead Solder Temperature Total Device Power Dissipation @ TA = 25°C Derate Above 25°C
−40 to +125 −40 to +100 −40 to +125 260 for 10 seconds
270 2.94
°C °C °C °C mW mW/°C
EMITTER
IF VR IF(pk) PD
DC / Average Forward Input Current Reverse Input Voltage Forward Current – Peak (300 ms, 2% Duty Cycle) LED Power Dissipation @ TA = 25°C Derate Above 25°C
60
mA
6
V
3
A
120
mW
1.41
mW/°C
DETECTOR
VCEO Collector−to−Emitter Voltage
30
V
VCBO Collector−to−Base Voltage
70
V
VECO Emitter−to−Collector Voltage
7
V
PD
Detector Power Dissipation @ TA = 25°C
150
mW
Derate Above 25°C
1.76
mW/°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
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4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M
ELECTRICAL CHARACTERISTICS − INDIVIDUAL COMPONENT CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min
Typ
Max Unit
EMITTER
VF
Input Forward Voltage
IF = 10 mA
−
1.18 1.50
V
IR
Reverse Leakage Current
DETECTOR
VR = 6.0 V
−
0.001
10
mA
BVCEO Collector−to−Emitter Breakdown Voltage
IC = 1.0 mA, IF = 0
30
100
−
V
BVCBO Collector−to−Base Breakdown Voltage
IC = 100 mA, IF = 0
70
120
−
V
BVECO Emitter−to−Collector Breakdown Voltage
IE = 100 mA, IF = 0
7
10
−
V
ICEO
Collector−to−Emitter Dark Current
VCE = 10 V, IF = 0
−
1
50
nA
ICBO
Collector−to−Base Dark Current
VCB = 10 V
−
−
20
nA
CCE
Capacitance
VCE = 0 V, f = 1 MHz
−
8
−
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ELECTRICAL CHARACTERISTICS − TRANSFER CHARACTERISTICS (TA = 25°C unless otherwise no.