2SD1306

2SD1306 Silicon NPN Epitaxial Application Low frequency amplifier, Muting Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 Preliminary Datasheet R07DS0280EJ0400 Rev.4.00 Jan 10, 2014 1 2 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 15 5 0.7 150 150 –55 to +150 (Ta = 25°C) Unit V V V A mW °C °C R07DS0280EJ0400 Rev.4.00 Jan 10, 2014 Page 1 of 6 2SD1306 Preliminary Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 30 — — V IC = 10 μA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 15 — — V IC = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 — — V IE = 10 μA, IC = 0 Collector cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product ICBO hFE*1 VBE VCE(sat) fT — — 1.0 μA VCB = 20 V, IE = 0 250 — 800 VCE = 1 V, IC = 150 mA*2 — — 1.0 V VCE = 1 V, IC = 150 mA*2 — — 0.5 V IC = 500 mA, IB = 50 mA*2 — 250 — MHz VCE = 1 V, IC = 150 mA*2 Notes: 1. The 2SD1306 is grouped by hFE as follows. 2. Pulse test Grade D E Mark ND NE hFE 250 to 500 400 to 800 R07DS0280EJ0400 Rev.4.00 Jan 10, 2014 Page 2 of 6 Collector Powe...